Semiconductor device

ABSTRACT

One of the objects is to improve display quality by reduction in malfunctions of a circuit. In a driver circuit formed using a plurality of pulse output circuits having first to third transistors and first to fourth signal lines, a first clock signal is supplied to the first signal line; a preceding stage signal is supplied to the second signal line; a second clock signal is supplied to the third signal line; an output signal is output from the fourth signal line. Duty ratios of the first clock signal and the second clock signal are different from each other. A period during which the second clock signal is changed from an L-level signal to an H-level signal after the first clock signal is changed from an H-level signal to an L-level signal is longer than a period during which the preceding stage signal is changed from an L-level signal to an H-level signal.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/168,293, filed May 31, 2016, now allowed, which is a continuation ofU.S. application Ser. No. 13/975,422, filed Aug. 26, 2013, now U.S. Pat.No. 9,362,412, which is a continuation of U.S. application Ser. No.12/731,722, filed Mar. 25, 2010, now U.S. Pat. No. 8,519,929, whichclaims the benefit of a foreign priority application filed in Japan asSerial No. 2009-077955 on Mar. 27, 2009, all of which are incorporatedby reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to semiconductor devices, display devices,liquid crystal display devices, light-emitting devices, driving methodsthereof, or production methods thereof. In particular, the presentinvention relates to semiconductor devices, display devices, liquidcrystal display devices, or light-emitting devices each including adriver circuit formed over the same substrate as a pixel portion, ordriving methods thereof. Alternatively, the present invention relates toelectronic devices including the semiconductor devices, the displaydevices, the liquid crystal display devices, or the light-emittingdevices.

2. Description of the Related Art

In recent years, with the increase of large display devices such asliquid crystal televisions, display devices have actively developed. Inparticular, a technique for forming a driver circuit such as a gatedriver over the same substrate as a pixel portion with the use of atransistor formed using a non-single-crystal semiconductor has activelydeveloped because the technique greatly contributes to reduction in costand improvement in reliability (see Reference 1).

REFERENCE

Reference 1: Japanese Published Patent Application No. 2006-293299

SUMMARY OF THE INVENTION

It is an object of one embodiment of the present invention to improvedisplay quality by reduction in malfunctions of a circuit.Alternatively, it is an object of one embodiment of the presentinvention to reduce signal distortion or signal delay. Alternatively, itis an object of one embodiment of the present invention to suppressdegradation in characteristics of a transistor. Alternatively, it is anobject of one embodiment of the present invention to decrease thechannel width of a transistor. Alternatively, it is an object of oneembodiment of the present invention to decrease a layout area.Alternatively, it is an object of one embodiment of the presentinvention to reduce the frame of a display device. Alternatively, it isan object of one embodiment of the present invention to obtain ahigher-definition display device. Alternatively, it is an object of oneembodiment of the present invention to reduce cost. Note that thedescription of these objects does not impede the existence of otherobjects. Note that one embodiment of the present invention does notnecessarily achieve all the above objects.

One embodiment of the present invention is a semiconductor device whichincludes a driver circuit formed using a plurality of pulse outputcircuits having first to third transistors and first to fourth terminalsrespectively connected to first to fourth signal lines, and a pixel. Inthe driver circuit, a first terminal of the first transistor iselectrically connected to the first signal line; a second terminal ofthe first transistor is electrically connected to the fourth signalline; a gate and a first terminal of the second transistor areelectrically connected to the third signal line; a first terminal of thethird transistor is electrically connected to the third signal line; agate of the third transistor is electrically connected to the secondsignal line; a gate of the first transistor, a second terminal of thesecond transistor, and a second terminal of the third transistor areelectrically connected to each other. A first clock signal is suppliedto the first signal line. A second clock signal is supplied to thesecond signal line. A preceding stage signal is supplied to the thirdsignal line. An output signal is output from the fourth signal line.Duty ratios of the first clock signal and the second clock signal aredifferent from each other.

In a semiconductor device according to one embodiment of the presentinvention, a period during which the second clock signal is changed froman L-level signal to an H-level signal after the first clock signal ischanged from an H-level signal to an L-level signal may be longer than aperiod during which the preceding stage signal is changed from anL-level signal to an H-level signal.

In a semiconductor device according to one embodiment of the presentinvention, the driver circuit may include a control circuit, a fourthtransistor, and a fifth transistor. A first terminal of the fourthtransistor is electrically connected to the fourth signal line. A secondterminal of the fourth transistor is electrically connected to a wiringfor supplying a low power supply potential. A first terminal of thefifth transistor is electrically connected to a node where the gate ofthe first transistor, the second terminal of the second transistor, andthe second terminal of the third transistor are electrically connectedto each other. A second terminal of the fifth transistor is electricallyconnected to the wiring for supplying a low power supply potential. Thecontrol circuit may control potentials of gates of the fourth transistorand the fifth transistor depending on a potential of the node where thegate of the first transistor, the second terminal of the secondtransistor, and the second terminal of the third transistor areelectrically connected to each other.

In a semiconductor device according to one embodiment of the presentinvention, the first to fifth transistors may have the same polarity.

In a semiconductor device according to one embodiment of the presentinvention, the first clock signal may be supplied to a first terminal ina pulse output circuit in an odd-numbered stage; the second clock signalmay be supplied to a second terminal in the pulse output circuit in theodd-numbered stage; a third clock signal may be supplied to a firstterminal in a pulse output circuit in an even-numbered stage; and afourth clock signal may be supplied to a second terminal in the pulseoutput circuit in the even-numbered stage.

Note that a variety of switches can be used as a switch. For example, anelectrical switch, a mechanical switch, or the like can be used as aswitch. That is, any element can be used as a switch as long as it cancontrol current, without limitation to a certain element. For example, atransistor (e.g., a bipolar transistor or a MOS transistor), a diode(e.g., a PN diode, a PIN diode, a Schottky diode, an MIM (metalinsulator metal) diode, an MIS (metal insulator semiconductor) diode, ora diode-connected transistor), a logic circuit in which such elementsare combined, or the like can be used as a switch. An example of amechanical switch is a switch formed using a MEMS (micro electromechanical system) technology, such as a digital micromirror device(DMD). Such a switch includes an electrode which can be movedmechanically, and operates by controlling conduction and non-conductionin accordance with movement of the electrode.

Note that in the case of using a transistor as a switch, the polarity(conductivity type) of the transistor is not particularly limited to acertain type because it operates just as a switch.

Note that a CMOS switch may be used as a switch with the use of both ann-channel transistor and a p-channel transistor.

Note that a display element, a display device which is a deviceincluding a display element, a light-emitting element, and alight-emitting device which is a device including a light-emittingelement can employ various modes and can include various elements. Forexample, a display medium, whose contrast, luminance, reflectivity,transmittance, or the like changes by electromagnetic action, such as anEL (electroluminescence) element (e.g., an EL element including organicand inorganic materials, an organic EL element, or an inorganic ELelement), an LED (e.g., a white LED, a red LED, a green LED, or a blueLED), a transistor (a transistor which emits light depending on theamount of current), an electron emitter, a liquid crystal element,electronic ink, an electropboretic element, a grating light valve (GLV),a plasma display panel (PDP), a digital micromirror device (DMD), apiezoelectric ceramic display, or a carbon nanotube, can be used in adisplay element, a display device, a light-emitting element, or alight-emitting device. Display devices having EL elements include an ELdisplay and the like. Display devices having electron emitters include afield emission display (FED), an SED-type flat panel display (SED:surface-conduction electron-emitter display), and the like. Displaydevices having liquid crystal elements include a liquid crystal display(e.g., a transmissive liquid crystal display, a transflective liquidcrystal display, a reflective liquid crystal display, a direct-viewliquid crystal display, or a projection liquid crystal display) and thelike. Display devices having electronic ink or electrophoretic elementsinclude electronic paper and the like.

For example, an element which controls transmission or non-transmissionof light by optical modulation action of liquid crystals can be used asa liquid crystal element. The element can include a pair of electrodesand liquid crystals. Note that the optical modulation action of liquidcrystals is controlled by an electric field applied to the liquidcrystals (including a horizontal electric field, a vertical electricfield, and a diagonal electric field). Note that in specific, thefollowing can be used for a liquid crystal element, for example: anematic liquid crystal, a cholesteric liquid crystal, a smectic liquidcrystal, a discotic liquid crystal, a thermotropic liquid crystal, alyotropic liquid crystal, a low-molecular liquid crystal, ahigh-molecular liquid crystal, a polymer dispersed liquid crystal(PDLC), a ferroelectric liquid crystal, an anti-ferroelectric liquidcrystal, a main-chain liquid crystal, a side-chain high-molecular liquidcrystal, a plasma addressed liquid crystal (PALC), a banana-shapedliquid crystal, and the like. In addition, the following can be used asa diving method of a liquid crystal: a TN (twisted nematic) mode, an STN(super twisted nematic) mode, an IPS (in-plane-switching) mode, an FFS(fringe field switching) mode, an MVA (multi-domain vertical alignment)mode, a PVA (patterned vertical alignment) mode, an ASV (advanced superview) mode, an ASM (axially symmetric aligned microcell) mode, an OCB(optically compensated birefringence) mode, an ECB (electricallycontrolled birefringence) mode, an FLC (ferroelectric liquid crystal)mode, an AFLC (anti-ferroelectric liquid crystal) mode, a PDLC (polymerdispersed liquid crystal) mode, a guest-host mode, a blue phase mode,and the like. Note that the present invention is not limited to this,and a variety of liquid crystal elements and driving methods thereof canbe used as a liquid crystal element and a driving method thereof.

Note that transistors with a variety of structures can be used as atransistor, without limitation to a certain type. For example, a thinfilm transistor (TFT) including a non-single-crystal semiconductor filmtypified by amorphous silicon, polycrystalline silicon, microcrystalline(also referred to as microcrystal, nanocrystal, or semi-amorphous)silicon, or the like can be used as a transistor.

Note that for example, a transistor including a compound semiconductoror an oxide semiconductor, such as ZnO, a-InGaZnO, SiGe, GaAs, IZO, ITO,SnO, TiO, or AlZnSnO (AZTO), a thin film transistor obtained by thinningsuch a compound semiconductor or an oxide semiconductor, or the like canbe used as a transistor. Thus, manufacturing temperature can be loweredand for example, such a transistor can be formed at room temperature.Accordingly, the transistor can be formed directly on a substrate havinglow heat resistance, such as a plastic substrate or a film substrate.Note that such a compound semiconductor or an oxide semiconductor can beused not only for a channel portion of the transistor but also for otherapplications. For example, such a compound semiconductor or an oxidesemiconductor can be used for a wiring, a resistor, a pixel electrode, alight-transmitting electrode, or the like. Since such an element can beformed at the same time as the transistor, cost can be reduced.

Note that for example, a transistor or the like formed by an inkjetmethod or a printing method can be used as a transistor. Thus, atransistor can be formed at room temperature, can be formed at a lowvacuum, or can be formed using a large substrate. Therefore, thetransistor can be formed without use of a mask (reticle), so that thelayout of the transistor can be changed easily. Alternatively, since thetransistor can be formed without use of a resist, material cost isreduced and the number of steps can be reduced. Further, since a filmcan be formed where needed, a material is not wasted as compared to amanufacturing method by which etching is performed after the film isformed over the entire surface, so that cost can be reduced.

Note that for example, a transistor or the like including an organicsemiconductor or a carbon nanotube can be used as a transistor. Thus,such a transistor can be formed over a flexible substrate. Asemiconductor device formed using such a substrate can resist shocks.

Note that transistors with a variety of different structures can be usedas a transistor. For example, a MOS transistor, a junction transistor, abipolar transistor, or the like can be used as a transistor.

Note that for example, a transistor with a multi-gate structure havingtwo or more gate electrodes can be used as a transistor. With themulti-gate structure, a structure where a plurality of transistors areconnected in series is provided because channel regions are connected inseries.

Note that for example, a transistor with a structure where gateelectrodes are formed above and below a channel can be used as atransistor. With the structure where the gate electrodes are formedabove and below the channel, a circuit structure where a plurality oftransistors are connected in parallel is provided.

Note that for example, a transistor with a structure where a gateelectrode is formed above a channel region, a structure where a gateelectrode is formed below a channel region, a staggered structure, aninverted staggered structure, a structure where a channel region isdivided into a plurality of regions, a structure where channel regionsare connected in parallel or in series, or the like can be used as atransistor.

Note that for example, a transistor with a structure where a sourceelectrode or a drain electrode overlaps with a channel region (or partof it) can be used as a transistor.

Note that for example, a transistor with a structure where an LDD regionis provided can be used as a transistor.

Note that a transistor can be formed using a variety of substrates,without limitation to a certain type. As the substrate, a semiconductorsubstrate (e.g., a single crystal substrate or a silicon substrate), anSOI substrate, a glass substrate, a quartz substrate, a plasticsubstrate, a metal substrate, a stainless steel substrate, a substrateincluding stainless steel foil, a tungsten substrate, a substrateincluding tungsten foil, a flexible substrate, an attachment film, paperincluding a fibrous material, a base material film, or the like can beused, for example. As a glass substrate, a barium borosilicate glasssubstrate, an aluminoborosilicate glass substrate, a soda-lime glasssubstrate, or the like can be used, for example. For a flexiblesubstrate, a flexible synthetic resin such as plastics typified bypolyethylene terephthalate (PET), polyethylene naphthalate (PEN), orpolyether sulfone (PES), or acrylic can be used, for example. For anattachment film, polypropylene, polyester, vinyl, polyvinyl fluoride,polyvinyl chloride, or the like can be used for example. For a basematerial film, polyester, polyamide, polyimide, an inorganic vapordeposition film, paper, or the like can be used, for example.

Note that the transistor may be formed using one substrate, and then,the transistor may be transferred to another substrate. In addition tothe above substrates over which the transistor can be formed, a papersubstrate, a cellophane substrate, a stone substrate, a wood substrate,a cloth substrate (including a natural fiber (e.g., silk, cotton, orhemp), a synthetic fiber (e.g., nylon, polyurethane, or polyester), aregenerated fiber (e.g., acetate, cupra, rayon, or regeneratedpolyester), or the like), a leather substrate, a rubber substrate, orthe like can be used as a substrate to which the transistor istransferred.

Note that all the circuits that are necessary to realize a predeterminedfunction can be formed using the same substrate (e.g., a glasssubstrate, a plastic substrate, a single crystal substrate, or an SOIsubstrate). Thus, cost can be reduced by reduction in the number ofcomponents and reliability can be improved by reduction in the number ofconnections to circuit components.

Note that it is possible not to form all the circuits that are necessaryto realize the predetermined function over the same substrate. That is,some of the circuits which are necessary to realize the predeterminedfunction can be formed using one substrate and some of the circuitswhich are necessary to realize the predetermined function can be formedusing another substrate. For example, some of the circuits which arenecessary to realize the predetermined function can be formed using aglass substrate and some of the circuits which are necessary to realizethe predetermined function can be formed using a single crystalsubstrate (or an SOI substrate). The single crystal substrate over whichsome of the circuits which are necessary to realize the predeterminedfunction (such a substrate is also referred to as an IC chip) can beconnected to the glass substrate by COG (chip on glass), and the IC chipcan be provided over the glass substrate. Alternatively, the IC chip canbe connected to the glass substrate by TAB (tape automated bonding), COP(chip on film), SMT (surface mount technology), a printed circuit board,or the like.

Note that a transistor is an element having at least three terminals: agate, a drain, and a source. The transistor has a channel region betweena drain region and a source region, and current can flow through thedrain region, the channel region, and the source region. Here, since thesource and the drain of the transistor change depending on thestructure, the operating condition, and the like of the transistor, itis difficult to define which is a source or a drain. Thus, a regionwhich serves as a source or a region which serves as a drain is notreferred to as a source or a drain in some cases. In that case, one ofthe source and the drain might be referred to as a first terminal, afirst electrode, or a first region, and the other of the source and thedrain might be referred to as a second terminal, a second electrode, ora second region, for example.

Note that a transistor may be an element having at least threeterminals: a base, an emitter, and a collector. Also in this case, oneof the emitter and the collector might be referred to as a firstterminal, a first electrode, or a first region, and the other of theemitter and the collector might be referred to as a second terminal, asecond electrode, or a second region, for example. Note that in the casewhere a bipolar transistor is used as the transistor, the term “gate”can be replaced with the term “base”.

Note that when it is explicitly described that “A and B are connected”,the case where A and B are electrically connected, the case where A andB are functionally connected, and the case where A and B are directlyconnected are included therein. Here, each of A and B is an object(e.g., a device, an element, a circuit, a wiring, an electrode, aterminal, a conductive film, or a layer). Accordingly, another elementmay be interposed between elements having a connection relationillustrated in drawings and texts, without limitation to a predeterminedconnection relation, for example, the connection relation illustrated inthe drawings and the texts.

For example, in the case where A and B are electrically connected, oneor more elements which enable electrical connection between A and B(e.g., a switch, a transistor, a capacitor, an inductor, a resistor,and/or a diode) can be connected between A and B.

For example, in the case where A and B are functionally connected, oneor more circuits which enable functional connection between A and B(e.g., a logic circuit such as an inverter, a NAND circuit, or a NORcircuit; a signal converter circuit such as a DA converter circuit, anAD converter circuit, or a gamma correction circuit; a potential levelconverter circuit such as a power supply circuit (e.g., a dc-dcconverter, a step-up de-dc converter, or a step-down dc-dc converter) ora level shifter circuit for changing a potential level of a signal; avoltage source; a current source; a switching circuit; an amplifiercircuit such as a circuit which can increase signal amplitude, theamount of current, or the like, an operational amplifier, a differentialamplifier circuit, a source follower circuit, or a buffer circuit; asignal generation circuit; a memory circuit; and/or a control circuit)can be connected between A and B. Note that for example, in the casewhere a signal output from A is transmitted to B even when anothercircuit is interposed between A and B, A and B are functionallyconnected.

Note that when it is explicitly described that “A and B are electricallyconnected”, the case where A and B are electrically connected (i.e., thecase where A and B are connected with another element or another circuitinterposed therebetween), the case where A and B are functionallyconnected (i.e., the case where A and B are functionally connected withanother circuit interposed therebetween), and the case where A and B aredirectly connected (i.e., the case where A and B are connected withoutanother element or another circuit interposed therebetween) are includedtherein. That is, when it is explicitly described that “A and B areelectrically connected”, the description is the same as the case whereit is explicitly only described that “A and B are connected”.

Note that when it is explicitly described that “B is formed on A” or “Bis formed over A”, it does not necessarily mean that B is formed indirect contact with A. The description includes the case where A and Bare not in direct contact with each other, i.e., the case where anotherobject is interposed between A and B. Here, each of A and B is an object(e.g., a device, an element, a circuit, a wiring, an electrode, aterminal, a conductive film, or a layer).

Accordingly, for example, when it is explicitly described that “a layerB is formed on (or over) a layer A”, it includes both the case where thelayer B is formed in direct contact with the layer A, and the case whereanother layer (e.g., a layer C or a layer D) is formed in direct contactwith the layer A and the layer B is formed in direct contact with thelayer C or the layer D. Note that another layer (e.g., a layer C or alayer D) may be a single layer or a plurality of layers.

In a similar manner, when it is explicitly described that “B is formedabove A”, it does not necessarily mean that B is formed in directcontact with A, and another object may be interposed therebetween. Thus,for example, when it is described that “a layer B is formed above alayer A”, it includes both the case where the layer B is formed indirect contact with the layer A, and the case where another layer (e.g.,a layer C or a layer D) is formed in direct contact with the layer A andthe layer B is formed in direct contact with the layer C or the layer D.Note that another layer (e.g., a layer C or a layer D) may be a singlelayer or a plurality of layers.

Note that when it is explicitly described that “B is formed on A”, “B isformed over A”, or “B is formed above A”, it includes the case where Bis formed obliquely over/above A.

Note that the same can be said when it is described that “B is formedunder A” or “B is formed below A”.

Note that when an object is explicitly described in a singular form, theobject is preferably singular. Note that the present invention is notlimited to this, and the object can be plural. In a similar manner, whenan object is explicitly described in a plural form, the object ispreferably plural. Note that the present invention is not limited tothis, and the object can be singular.

Note that size, the thickness of layers, or regions in the drawings areexaggerated for simplicity in some cases. Thus, embodiments of thepresent invention are not limited to such scales illustrated in thedrawings.

Note that the drawings are perspective views of ideal examples, andshapes or values are not limited to those illustrated in the drawings.For example, the following can be included: variation in shape due to amanufacturing technique; variation in shape due to an error, variationin signal, voltage, or current due to noise; variation in signal,voltage, or current due to a difference in timing: or the like.

Note that technical terms are used in order to describe a specificembodiment, example, or the like in many cases. However, one embodimentof the present invention should not be construed as being limited by thetechnical terms.

Note that terms which are not defined (including terms used for scienceand technology, such as technical terms or academic parlance) can beused as terms which have meaning equal to general meaning that anordinary person skilled in the art understands. It is preferable thatterms defined by dictionaries or the like be construed as consistentmeaning with the background of related art.

Note that terms such as “first”, “second”, “third”, and the like areused for distinguishing various elements, members, regions, layers, andareas from others. Therefore, the terms such as “first”, “second”,“third”, and the like do not limit the number of the elements, members,regions, layers, areas, or the like. Further, for example, the term“first” can be replaced with the term “second”, “third”, or the like.

Note that terms for describing spatial arrangement, such as “over”,“above”, “under”, “below”, “laterally”, “right”, “left”, “obliquely”,“behind”, “front”, “inside”, “outside”, and “in” are often used forbriefly showing a relationship between an element and another element orbetween a feature and another feature with reference to a diagram. Notethat embodiments of the present invention are not limited to this, andsuch terms for describing spatial arrangement can indicate not only thedirection illustrated in a diagram but also another direction. Forexample, when it is explicitly described that “B is over A”, it does notnecessarily mean that B is placed over A, and can include the case whereB is placed under A because a device in a diagram can be inverted orrotated by 180°. Accordingly, “over” can refer to the directiondescribed by “under” in addition to the direction described by “over”.Note that embodiments of the present invention are not limited to this,and “over” can refer to any of the other directions described by“laterally”, “right”, “left”, “obliquely”, “behind”, “front”, “inside”,“outside”, and “in” in addition to the directions described by “over”and “under” because the device in the diagram can be rotated in avariety of directions. That is, the terms for describing spatialarrangement can be construed adequately depending on the situation.

In one embodiment of the present invention, display quality can beimproved by reduction in malfunctions of a circuit. Alternatively, inone embodiment of the present invention, signal distortion or signaldelay can be reduced. Alternatively, in one embodiment of the presentinvention, degradation in characteristics of a transistor can besuppressed. Alternatively, in one embodiment of the present invention,the channel width of a transistor can be decreased. Alternatively, inone embodiment of the present invention, a layout area can be decreased.Alternatively, in one embodiment of the present invention, the frame ofa display device can be reduced. Alternatively, in one embodiment of thepresent invention, a higher-definition display device can be obtained.Alternatively, in one embodiment of the present invention, cost can bereduced.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1D are circuit diagrams of a semiconductor device;

FIGS. 2A and 2B are a circuit diagram of the semiconductor device and atiming chart for illustrating the operation of the semiconductor device;

FIGS. 3A to 3C are schematic views for illustrating the operation of thesemiconductor device;

FIG. 4 is a timing chart for illustrating the operation of thesemiconductor device;

FIGS. 5A and 5B are schematic views for illustrating the operation ofthe semiconductor device;

FIG. 6 is a timing chart for illustrating the operation of thesemiconductor device;

FIGS. 7A and 7B are schematic views for illustrating the operation ofthe semiconductor device;

FIGS. 8A to 8C are circuit diagrams of a semiconductor device;

FIGS. 9A to 9C are circuit diagrams of a semiconductor device and atiming chart for illustrating the operation of the semiconductor device;

FIGS. 10A and 10B are schematic views for illustrating the operation ofa semiconductor device;

FIGS. 11A and 11B are a circuit diagram of a semiconductor device and atiming chart for illustrating the operation of the semiconductor device;

FIGS. 12A and 12B are schematic views for illustrating the operation ofthe semiconductor device;

FIG. 13 is a schematic view for illustrating the operation of thesemiconductor device;

FIGS. 14A and 14B are schematic views for illustrating the operation ofthe semiconductor device;

FIGS. 15A and 15B are schematic views for illustrating the operation ofthe semiconductor device;

FIGS. 16A and 16B are circuit diagrams of a semiconductor device;

FIGS. 17A to 17D are circuit diagrams of a semiconductor device;

FIGS. 18A and 18B are block diagrams of display devices;

FIGS. 19A to 19E are block diagrams of display devices;

FIGS. 20A to 20D are circuit diagrams of a semiconductor device and atiming chart for illustrating the operation of the semiconductor device;

FIGS. 21A to 21G are circuit diagrams of protection circuits;

FIGS. 22A and 22B are circuit diagrams of protection circuits;

FIGS. 23A to 23C are cross-sectional views of transistors;

FIGS. 24A to 24C are a top view of a display device and cross-sectionalviews of the display device;

FIGS. 25A to 25E are cross-sectional views for illustratingmanufacturing steps of a transistor;

FIGS. 26A to 26H are diagrams illustrating electronic devices;

FIGS. 27A to 27H are diagrams illustrating electronic devices;

FIGS. 28A to 28C are a circuit diagram of a semiconductor device andtiming charts for illustrating the operation of the semiconductordevice;

FIGS. 29A and 29B are circuit diagrams of the semiconductor device;

FIGS. 30A and 30B are circuit diagrams of the semiconductor device;

FIGS. 31A and 31B are circuit diagrams of the semiconductor device; and

FIG. 32 is a circuit diagram of the semiconductor device.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, embodiments of the present invention will be described withreference to the drawings. Note that the embodiments can be implementedin various different ways and it will be readily appreciated by thoseskilled in the art that modes and details of the embodiments can bechanged in various ways without departing from the spirit and scope ofthe present invention. Therefore, the present invention should not beconstrued as being limited to the following description of theembodiments. Note that in structures described below, the same portionsor portions having similar functions are denoted by common referencenumerals in different drawings, and description thereof is not repeated.

Note that a content (or may be part of the content) described in oneembodiment may be applied to, combined with, or replaced by a differentcontent (or may be part of the different content) described in theembodiment and/or a content (or may be part of the content) described inone or a plurality of different embodiments.

Note that in each embodiment, a content described in the embodiment is acontent described with reference to a variety of diagrams or a contentdescribed with a text described in this specification.

Note that by combining a diagram (or may be part of the diagram)illustrated in one embodiment with another part of the diagram, adifferent diagram (or may be part of the different diagram) illustratedin the embodiment, and/or a diagram (or may be part of the diagram)illustrated in one or a plurality of different embodiments, much morediagrams can be formed.

Embodiment 1

In this embodiment, examples of semiconductor devices are described. Thesemiconductor device in this embodiment can be used for a shiftregister, a gate driver, a source driver, a display device, or the like,for example. Note that the semiconductor device in this embodiment canalso be referred to as a driver circuit.

First, a semiconductor device which functions as a shift register in adriver circuit is described with reference to FIGS. 1A to 1D, FIGS. 2Aand 2B, FIGS. 3A to 3C, FIG. 4, FIGS. 5A and 5B, and FIG. 6. Asemiconductor device 100 includes first to N-th pulse output circuits101_1 to 101_N(N≥2) (see FIG. 1A). A first clock signal CK1, a thirdclock signal CK3, a second clock signal CK2, and a fourth clock signalCK4 are input to the first to N-th pulse output circuits 101_1 to 101_Nin the semiconductor device 100 illustrated in FIG. 1A from a firstwiring 102, a second wiring 103, a third wiring 104, and a fourth wiring105, respectively. A start pulse SP or an output signal (also referredto as a preceding stage signal OUT_N−1), which is from the pulse outputcircuit in the preceding stage, is input to the pulse output circuit ineach stage. Further, an output signal OUT_N which is to be output to agate line, a data line, or the like is output from the pulse outputcircuit in each stage. Note that in the pulse output circuit, a dummystage for outputting a signal which does not contribute to display in adisplay portion may be provided. For example, in a structure where thepulse output circuit is used as a shift register in a gate driver andoutputs pulses sequentially to n pieces of gate lines, N pieces ofstages (n≤N) may be provided. Note that the number of outputs of anoutput signal may be plural depending on the loads of portions to whichthe output signal is output. With a structure where a plurality ofoutput signals corresponding to the loads are output, signal distortion,signal delay, or the like can be suppressed.

Note that the third clock signal CK3 is, for example, a signal whosephase is deviated from the phase of the first clock signal CK1 by 180°.In addition, the first clock signal CK1 may be a signal having a dutyratio of 50%, and the third clock signal CK3 may be a clock signalobtained by inversion of the first clock signal CK1. Note that thefourth clock signal CK4 is, for example, a signal whose phase isdeviated from the phase of the second clock signal CK2 by 180°.

Note that input signals, which are the first clock signal CK1 and thethird clock signal CK3, and the second clock signal CK2 and the fourthclock signal CK4, are switched between the pulse output circuit in theodd-numbered stage and the pulse output circuit in the even-numberedstage. In specific, as illustrated in FIG. 1B, in the pulse outputcircuit 101_1 in the odd-numbered stage (here, a first stage, forexample), the first clock signal CK1 is input to a first terminal; thesecond clock signal CK2 is input to a second terminal; the start pulseSP (the preceding stage signal OUT_N−1 in the odd-numbered stages aftera third stage) is input to a third terminal; and the output signal OUT_Nis output from a fourth terminal. Further, as illustrated in FIG. 1C, inthe pulse output circuit 101_2 in the even-numbered stage (here, asecond stage, for example), the third clock signal CK3 is input to afirst terminal; the fourth clock signal CK4 is input to a secondterminal; the preceding stage signal OUT_1 (the preceding stage signalOUT_N−1 in the even-numbered stages after a fourth stage) is input to athird terminal; an output signal OUT_2 is output from a fourth terminal.Note that the first clock signal CK1 and the third clock signal CK3, andthe second clock signal CK2 and the fourth clock signal CK4 are each asignal which is repeatedly changed between an H-level signal (alsoreferred to as a high power supply potential level or an H level) and anL-level signal (also referred to as a low power supply potential levelor an L level) every predetermined period.

Next, an example of the circuit structure of the pulse output circuit isdescribed with reference to FIG. 1D. Note that in FIG. 1D, the structureof the pulse output circuit in the odd-numbered stage is described as anexample. Note that the input signals to the pulse output circuit in theodd-numbered stage and the pulse output circuit in the even-numberedstage differ from each other. That is, the first clock signal CK1 andthe third clock signal CK3 are input to the pulse output circuit in theodd-numbered stage, and the second clock signal CK2 and the fourth clocksignal CK4 are input to the pulse output circuit in the even-numberedstage, as described above.

The pulse output circuit includes first to fifth transistors 111 to 115and a control circuit 131. In addition, FIG. 1D illustrates the casewhere a high power supply potential VDD is supplied through a firstpower supply line 141 and a low power supply potential VSS is suppliedthrough a second power supply line 142, in addition to theabove-described signals which are input to the first to fourthterminals. Note that in FIG. 1D, a wiring for inputting the first clocksignal CK1 to the first terminal, a wiring for inputting the secondclock signal CK2 to the second terminal, a wiring for inputting thepreceding stage signal OUT_N−1 to the third terminal, and a wiring foroutputting the output signal OUT_N from the fourth terminal are referredto as a first signal line 151, a second signal line 152, a third signalline 153, and a fourth signal line 154, respectively. Note that fordescription, as illustrated in FIG. 1D, a portion where a gate of thefirst transistor 111, a second terminal of the second transistor 112, asecond terminal of the third transistor 113, and a first terminal of thefifth transistor 115 are connected to each other is denoted by a node A.Further, a portion where a gate of the fourth transistor 114 and a gateof the fifth transistor 115 are connected to each other is denoted by anode B.

A first terminal of the first transistor 111 is connected to the firstsignal line 151. A second terminal of the first transistor 111 isconnected to a first terminal of the fourth transistor 114 and thefourth signal line 154. The gate of the first transistor 111 isconnected to the node A. A first terminal of the second transistor 112is connected to a gate of the second transistor 112, a first terminal ofthe third transistor 113, and the third signal line 153. The secondterminal of the second transistor 112 is connected to the node A. Thegate of the second transistor 112 is connected to the first terminal ofthe second transistor 112, the first terminal of the third transistor113, and the third signal line 153. The first terminal of the thirdtransistor 113 is connected to the gate of the second transistor 112,the first terminal of the second transistor 112, and the third signalline 153. The second terminal of the third transistor 113 is connectedto the node A. A gate of the third transistor 113 is connected to thesecond signal line 152. A first terminal of the fourth transistor 114 isconnected to the second terminal of the first transistor 111 and thefourth signal line 154. A second terminal of the fourth transistor 114is connected to the second power supply line 142. The gate of the fourthtransistor 114 is connected to the node B. The first terminal of thefifth transistor 115 is connected to the node A. A second terminal ofthe fifth transistor 115 is connected to the second power supply line142. The gate of the fifth transistor 115 is connected to the node B.The control circuit 131 is a circuit which has a function of controllingthe level of a potential of the node B in accordance with a potential ofthe node A, and is connected to the node A, the first power supply line141, the second power supply line 142, and the node B.

Note that a capacitor for performing bootstrap operation by setting thegate of the first transistor 111 in a floating state may be additionallyprovided between the gate of the first transistor 111 and the secondterminal of the first transistor 11 l. When the bootstrap operation canbe performed using parasitic capacitance between the gate of the firsttransistor 111 and the second terminal of the first transistor 111, thecapacitor can be eliminated.

Note that voltage refers to a potential difference between a givenpotential and a ground potential in many cases. Thus, voltage,potential, and potential difference can be interchanged one another.

Note that the first to fifth transistors 111 to 115 preferably have thesame polarity and are n-channel transistors in many cases. However, thisembodiment is not limited to this. The first to fifth transistors 111 to115 can be p-channel transistors.

Here, before circuit operation in this embodiment is described indetail, operation in a circuit structure disclosed in Reference 1 isdescribed as a comparative example. Then, advantages of the structure inthis embodiment are described in detail. Note that the comparativeexample illustrated in FIGS. 28A to 28C, FIGS. 29A and 29B, FIGS. 30Aand 30B, FIGS. 31A and 31B, and FIG. 32 is described not to be comparedto all the structures disclosed in this specification but to be comparedto the structure illustrated in FIGS. 1A to 1D.

FIG. 28A illustrates transistors M1 to M8 which are included in a shiftregister in FIG. 5 and FIG. 6 in Reference 1. In the circuit structuredisclosed in Reference 1, fall time of the output signal OUT_N in a gatedriver can be shortened as illustrated in the timing chart of FIG. 28B.Next, on/off of each transistor and a potential of each wiring aredescribed in FIG. 28B by division of the whole period into a firstperiod T1, a second period T2, a third period T3, a fourth period T4,and a fifth period T5. Note that the potential of each wiring is denotedby “H” (a signal determined by a high power supply potential or anH-level signal) or “L” (a signal determined by a low power supplypotential or an L-level signal) for simplicity. Note that FIG. 28Cillustrate a specific example of the waveform of the clock signal CK andthe output signal OUT_N, as in FIG. 8 in Reference 1. Note that sincedescription in FIGS. 28A to 28C is similar to description in FIG. 6,FIG. 7, and FIG. 8 in Reference 1, description in Reference 1 isincorporated for detailed description. Note that the transistors M3, M5,and M8 provided in a region surrounded by a dotted line 280 in FIG. 28Acorrespond to a control circuit which has a function of controlling thelevel of the potential of the node B in accordance with the potential ofthe node A and controls on/off of the transistor M4. Note that thecontrol circuit is a circuit having a function which is similar to thefunction of the control circuit 131 illustrated in FIG. 1D in Embodiment1.

In the first period T1, the operation of the first half is illustratedin FIG. 29A as a period T1-1. Note that “the first half” here refers toa transition period by supply of a predetermined potential in the firstperiod T1. First, the preceding stage signal OUT_N−1, the clock signalCK, and a signal OUT_N+2 for resetting (hereinafter referred to as areset signal) are an H-level signal, an L-level signal, and an L-levelsignal, respectively. Accordingly, the potential of the node A is at apotential obtained by addition of the threshold voltage to the low powersupply potential VSS (VSS+Vth), and the transistors M1 and M3(transistors with no marks in the diagrams) are turned on, asillustrated in the diagram. Further, as illustrated in FIG. 29A, thetransistors M5, M7, and M8 are turned on and the transistors M2, M4, andM6 are turned off (transistors with×marks in the diagrams). Then,current flows as indicated by dashed arrows in FIG. 29A. Next, theoperation of the latter half in the first period T1 is illustrated inFIG. 29B as a period T1-2. Note that “the latter half” here refers to astationary state after the transition state by supply of a predeterminedpotential in the first period T1. When current flows as in FIG. 29A, thepotential of the node A rises to a potential obtained by subtraction ofthe threshold voltage from the high power supply potential VDD(VDD-Vth), and the transistor M7 is turned off, as illustrated in FIG.29B. In this case, the node A is set to be in a floating state. Then,the potential of each wiring in the first period T1 is determined as inFIG. 28B.

Note that FIG. 28B briefly illustrates a waveform when the rise of theoutput signal OUT_N which corresponds to the preceding stage signalOUT_N−1 in a different stage is delayed as compared to the rise of theclock signal CK, as illustrated in FIG. 28C. The delay of the precedingstage signal OUT_N−1 results in rise in the potential of the node A andfall in the potential of the node B. This is because the load of awiring or the like connected to a subsequent stage of the transistor M1is increased, so that the size of the transistor is designed to belarger. Therefore, gate capacitance of the transistor M1 is increased,and it takes longer time to store or release electric charge to/from agate of the transistor M1 when the transistor M1 is turned on or offwhich appears as delay of the rise or fall of the signal (indicated bydashed-two dotted lines 281 in FIG. 28B). Note that malfunctions of thecircuit due to delay of the rise or fall of the signal do not easilyoccur in the first period T1.

Next, in the second period T2, the clock signal CK, the preceding stagesignal OUT_N−1, and the reset signal OUT_N+2 are an H-level signal, anL-level signal, and an L-level signal, respectively. Accordingly, thepotential of the output signal OUT_N rises and the potential of the nodeA which is set to be in a floating state by bootstrap operation rises.Thus, current flows as indicated by dashed arrows in FIG. 30A and anH-level signal is output as the output signal OUT_N.

Next, in the third period T3, the clock signal CK, the preceding stagesignal OUT_N−1, the reset signal OUT_N+2 are L-level signals. In thiscase, since the potential of the node A is higher than the potentialVDD+Vth by the bootstrap operation in the second period 12, thetransistor M1 is kept on. Then, current flows from the terminaloutputting the output signal OUT_N whose potential is at an H level asindicated by dashed arrows in FIG. 30B, so that the potential of theoutput signal OUT_N decreases to an L level. After that, with capacitivecoupling due to parasitic capacitance of the transistor M1, thepotential of the node A decreases to around VDD-Vth. Thus, the potentialof the output signal OUT_N is at an L level. In the third period T3, thetransistor M1 is kept on by keeping the potential of the node A at ahigh potential. When the transistor M1 is on in the third period T3, theclock signal CK whose potential is at an L level can be supplied as theoutput signal OUT_N through the transistor M1. Since the channel widthof the transistor M1 is larger than the channel widths of the othertransistors because the transistor M1 is used for driving a gate line,for example, a large amount of current can flow and the fall time of theoutput signal OUT_N can be shortened.

Next, in the fourth period T4, conduction/non-conduction of each wiringand each transistor just after the period is changed from the thirdperiod T3 to the fourth period T4 is illustrated in FIG. 31A as a periodT4-1. In the period T4-1, the clock signal CK and the preceding stagesignal OUT_N−1 are an H-level signal and an L-level signal,respectively. In this case, although the reset signal OUT_N+2 is anH-level signal, delay of rise or fall in a signal occurs, as in thepreceding stage signal OUT_N−1 (indicated by a dashed-two dotted line282 in FIG. 28B). Therefore, the rise of the output signal OUT_N whichcorresponds to the reset signal OUT_N+2 in a different stage is delayedas compared to the rise of the clock signal CK as illustrated in FIG.28C, so that the reset signal OUT_N+2 and the clock signal function asan L-level signal in a short period in the period T4-1 and an H-levelsignal, respectively. Accordingly, current flows through the transistorM1 as indicated by dashed arrows in FIG. 31A. Thus, the potential of theoutput signal OUT_N cannot be kept at the L level and noise is generatedas indicated by a dashed-two dotted line 283 in FIG. 28B. Note that in aperiod T4-2 after the period T4-1, as illustrated in FIG. 31B, the resetsignal OUT_N+2 is an H-level signal. Thus, the transistors M2, M4, andM6 are turned on; current flows as indicated by the dashed arrows inFIG. 31A; electric charge stored in the node A is released; and thepotential of the output signal OUT_N is at an L level.

Next, the fifth period T5 is described with reference to FIG. 32. In thefifth period T5, the clock signal CK, the preceding stage signalOUT_N−1, and the reset signal OUT_N+2 are an H-level signal or anL-level signal, an L-level signal, and an L-level signal, respectively.In this case, since the electric charge stored in the node A isreleased, the transistor M3 is turned off and the transistors M2 and M4are turned on. Then, current flows as indicated by dashed arrows in FIG.32, so that the potential of the output signal OUT_N is kept at the Llevel.

As described above, in the conventional technique (Reference 1), theclock signal CK is an H level in a period during which the transistor M1is on in the period T4-1, so that the output signal OUT_N which is anunintended signal is supplied to a gate wiring or the like in somecases. Accordingly, the unintended output signal OUT_N might causedisplay defects.

Next, a basic circuit which can be used in the semiconductor device inthis embodiment is illustrated in FIGS. 2A and 2B, and advantages or thelike of the basic circuit over the circuit in FIGS. 28A to 28C, FIGS.29A and 29B, FIGS. 30A and 30B, FIGS. 31A and 31B, and FIG. 32 havingthe conventional structure are described in detail. In the structuredescribed in this embodiment, a gate driver in which the fall time ofthe output signal OUT_N is shortened and the potential of the outputsignal OUT_N is prevented from rising can be provided.

Next, in a circuit in FIG. 2A, among the wirings and the transistorsillustrated in FIGS. 1A to 1D, three transistors of the first transistor111, the second transistor 112, and the third transistor 113, and thefirst to fourth signal lines 151 to 154 are focused. Note that sinceconnection between terminals of each transistor in the circuit in FIG.2A is similar to the connection in FIG. 1D, detailed description thereofis omitted. Further, in order to specifically describe the operation ofa semiconductor device functioning as a shift register in a drivercircuit with the use of the circuit in FIG. 2A, a timing chart in FIG.2B is described by division of the whole period into the first periodT1, the second period T2, the third period T3, and the fourth period T4.Note that in the following description, the first to third transistors111 to 113 are N-channel transistors and are turned on when gate-sourcevoltage Vgs exceeds the threshold voltage (Vth). In the timing chart inFIG. 2B, specific examples of waveforms of the first clock signal CK1,the third clock signal CK3, the second clock signal CK2, the fourthclock signal CK4, the preceding stage signal OUT_N−1, the node A, andthe output signal OUT_N are illustrated. Furthermore, a high powersupply potential and a low power supply potential of each signal are VDDand VSS, except the node A.

Note that the first clock signal CK1 and the third clock signal CK3, andthe second clock signal CK2 and the fourth clock signal CK4 are signalshaving different duty ratios, as illustrated in FIG. 2B. For example, asillustrated in FIG. 2B, each of the first clock signal CK1 and the thirdclock signal CK3 is a signal having a duty ratio of 50% and each of thesecond clock signal CK2 and the fourth clock signal CK4 is a clocksignal having a duty ratio less than 50%.

In the first period T1, the operation of the first half is illustratedin FIG. 3A as the period T1-1. Note that “the first half” here refers toa period before the second clock signal CK2 becomes an H-level signalamong predetermined potentials supplied to the signal lines in the firstperiod T1. In the period T1-1, the preceding stage signal OUT_N−1, thefirst clock signal CK1, and the second clock signal CK2 are an H-levelsignal, an L-level signal, and an L-level signal, respectively.Accordingly, the potential of the node A is at a potential obtained byaddition of the threshold voltage to the low power supply potential VSS(VSS+Vth), so that the first and second transistors 111 and 112 areturned on and the third transistor 113 is turned off as illustrated inthe diagram. Then, current flows as indicated by dashed arrows in FIG.3A. After that, when the potential of the node A rises from VSS+Vth toVDD-Vth, the first transistor 111 is turned off Next, the operation ofthe latter half in the first period T1 is illustrated in FIG. 3B as theperiod T1-2. Note that “the latter half” here refers to a period duringwhich the second clock signal CK2 is an H-level signal or an L-levelsignal after the H-level signal among the predetermined potentialssupplied to the signal lines in the first period T1. In the period T1-2,the preceding stage signal OUT_N−1, the first clock signal CK1, and thesecond clock signal CK2 are an H-level signal, an L-level signal, and anH-level signal (changed to an L-level signal later), respectively. Then,the potential of the node A is not particularly changed from VDD-Vth, sothat the first transistor 111 is turned on, the second transistor 112 isturned off, and the third transistor 113 is turned on or off, asillustrated in the diagram. Then, current flows as indicated by a dashedarrow in FIG. 3B.

Note that examples of the period T1-1 and the period T1-2 in the firstperiod T1 are described with reference to FIG. 4. As illustrated in FIG.4, in the first period T1, a period during which the second clock signalCK2 is changed from an L-level signal to an H-level signal is denoted bythe period T1-1 and the following period is denoted by the period T1-2.Note that although FIG. 2B illustrates an example where the second clocksignal CK2 is changed from an H-level signal to an L-level signal in theperiod T1-2, the second clock signal CK2 may be kept at the H level.Note that as illustrated in the diagram, it is preferable that theperiod T1-1 be set longer than a period t1 during which the precedingstage signal OUT_N−1 is changed from an L-level signal to an H-levelsignal.

Note that as in FIG. 28B, FIG. 2B briefly illustrates a waveform whenthe rise of the output signal OUT_N which corresponds to the precedingstage signal OUT_N−1 in a different stage is delayed as compared to therise of the first clock signal CK1. Description of delay of the waveformis similar to the description in FIG. 28B.

Next, in the second period T2, the first clock signal CK1, the precedingstage signal OUT_N−1, and the second clock signal CK2 are an H-levelsignal, an L-level signal, and an L-level signal, respectively.Accordingly, the potential of the output signal OUT_N rises and thepotential of the node A which is set to be in a floating state bybootstrap operation rises. Thus, current flows as indicated by a dashedarrow in FIG. 3C and an H-level signal is output as the output signalOUT_N.

Next, in the third period T3, the operation of the first half isillustrated in FIG. 5A as a period T3-1. Note that “the first half” hererefers to a period before the second clock signal CK2 becomes an H-levelsignal among predetermined potentials supplied to the signal lines inthe third period T3. In the period T3-1, the first clock signal CK1, thepreceding stage signal OUT_N−1, the second clock signal CK2 are L-levelsignals. In this case, since the potential of the node A is higher thanthe potential VDD+Vth by the bootstrap operation in the second periodT2, the first transistor 111 is kept on. Then, current flows from theterminal outputting the output signal OUT_N whose potential is at an Hlevel as indicated by a dashed arrow in FIG. 5A, so that the potentialof the output signal OUT_N decreases to an L level. After that, withcapacitive coupling due to parasitic capacitance of the first transistor111, the potential of the node A decreases to around VDD-Vth. Thus, thepotential of the output signal OUT_N is at an L level. In the periodT3-1 in the third period T3, the first transistor 111 is kept on bykeeping the potential of the node A at a high potential. When the firsttransistor 111 is on in the period T3-1 in the third period T3, thefirst clock signal CK1 whose potential is at an L level can be suppliedas the output signal OUT_N through the first transistor 111. Since thechannel width of the first transistor 111 is larger than the channelwidths of the other transistors because the first transistor 111 is usedfor driving a gate line, for example, a large amount of current can flowand the fall time of the output signal OUT_N can be shortened. Next, theoperation of the latter half in the third period T3 is illustrated inFIG. 5B as a period T3-2. Note that “the latter half” here refers to aperiod during which the second clock signal CK2 is an H-level signal oran L-level signal after the H-level signal among the predeterminedpotentials supplied to the signal lines in the third period T3. In theperiod T3-2, the preceding stage signal OUT_N−1, the first clock signalCK1, and the second clock signal CK2 are an L-level signal, an L-levelsignal, and an H-level signal (changed to an L-level signal later),respectively. Then, current flows as indicated by the dashed arrow inFIG. 5B. Thus, the second transistor 112 is turned off, the thirdtransistor 113 is turned on, and the potential of the node A is at an Llevel.

Note that examples of the period T3-1 and the period T3-2 in the thirdperiod T3 are described with reference to FIG. 6. As illustrated in FIG.6, in the third period T3, a period during which the second clock signalCK2 is changed from an L-level signal to an H-level signal is denoted bythe period T3-1 and the following period is denoted by the period T3-2.Note that although FIG. 2B illustrates an example where the second clocksignal CK2 is changed from an H-level signal to an L-level signal in theperiod T3-2, a signal which is kept at the H level may be used (forexample, a clock signal CK2-1 in FIG. 6). Further, the H-level signal inthe period T3-2 may be a signal which is kept at the H level after thethird period T3 (for example, a clock signal CK2-2 in FIG. 6). Note thatas in the period T1-1, it is preferable that the period T3-1 be setlonger than a period during which the output signal OUT_N+1 (not shown)is changed from an L-level signal to an H-level signal in the thirdperiod T3. In other words, it is preferable that a period during whichthe second clock signal CK2 is changed from an L-level signal to anH-level signal after the first clock signal CK1 is changed from anH-level signal to an L-level signal (the period T3-1 in FIG. 6) is setlonger than the period during which the output signal OUT_N+1 is changedfrom an L-level signal to an H-level signal.

Next, in the fourth period T4, conduction/non-conduction of each wiringand each transistor in a period during which the second clock signal CK2is an L-level signal is illustrated in FIG. 7A as the period T4-1. Inthe period T4-1, the preceding stage signal OUT_N−1 and the first clocksignal CK1 are an L-level signal and a signal whose potential isswitched between an H level and an L level, respectively. In this case,since the potential of the node A is set at a potential of an L-levelsignal through the operation in the third period T3, the firsttransistor 111 is kept off. Thus, the potential of the output signalOUT_N is at an L level. The operation of the latter half of theoperation in the fourth period T4 is illustrated in FIG. 7B as a periodT4-2. Note that “the latter half” here refers to a period during whichthe second clock signal CK2 is an H-level signal in the fourth periodT4. In the period T4-2, the preceding stage signal OUT_N−1 and the firstclock signal CK1 are L-level signals. Further, since the second clocksignal CK2 is an H-level signal in the period T4-2, the third transistor113 is turned on and the first and second transistors 111 and 112 areturned off. Accordingly, current flows as indicated by a dashed arrow inFIG. 7B. Thus, the second transistor 112 is turned off, the thirdtransistor 113 is turned on, and the potential of the node A is at an Llevel.

As described above, with the structure in FIGS. 1A to 1C which is thestructure in this embodiment, by setting the potential of the secondclock signal CK2 at an H level after setting the potential of the secondclock signal CK2 at an L level in the period 13-1 in the third periodT3, the first clock signal CK1 which is at an L level can be outputthrough the first transistor 111, and the fall time of the output signalOUT_N can be shortened. Further, by setting the potential of the secondclock signal CK2 at an H level after setting the potential of the secondclock signal CK2 at an L level in the period T3-2 in the third periodT3, the first transistor 111 can be turned off before the first clocksignal CK1 is set at an H level again. Thus, the first clock signal CK1which is at an H level can be prevented from being output through thefirst transistor 111. Accordingly, the fall time of the output signalOUT_N can be shortened and the rise in the potential of the outputsignal OUT_N can be prevented.

Note that FIG. 8A illustrates a structure which is different from thestructure of the pulse output circuit in an odd-numbered stageillustrated in FIG. 2A. The structure illustrated in FIG. 8A differsfrom the structure illustrated in FIG. 2A in that the first terminal ofthe third transistor 113 is connected to the second power supply line142 to which the low power supply potential VSS is supplied. Inaddition, a different structure is illustrated in FIG. 8B. The structureillustrated in FIG. 8B differs from the structure illustrated in FIG. 2Ain that the first terminal of the third transistor 113 is connected tothe first signal line 151 to which the first clock signal CK1 is input.Further, a different structure is illustrated in FIG. 8C. The structureillustrated in FIG. 8C differs from the structure illustrated in FIG. 2Ain that the first terminal of the third transistor 113 is connected to asignal line 155 to which the fourth clock signal CK4 is input (alsoreferred to as a fifth signal line). With the structures in FIGS. 8A to8C, a signal which is input to the gate of the third transistor 113 canbe prevented from being transmitted to the preceding stage signalOUT_N−1 which is input to the third signal line 153. For example, inFIG. 2A, parasitic capacitance exists between the gate of the thirdtransistor 113 and the third signal line 153. Due to the parasiticcapacitance, the second clock signal CK2 is transmitted to a potentialof the third signal line 153. With the structures in FIGS. 8A to 8C,signal transmission due to the parasitic capacitance can be prevented.Furthermore, with the structures in FIGS. 8A to 8C, the first clocksignal CK1 or the fourth clock signal CK4 is input to the first terminalor the second terminal of the third transistor 113, so that reverse biasvoltage having a polarity which is opposite to that of voltage used forturning on the third transistor 113 can be applied. Thus, degradation ofthe transistor due to electron trap at the time of turning on the thirdtransistor 113 can be suppressed.

Note that FIG. 9A illustrates a structure which is different from thestructures of the pulse output circuits in odd-numbered stagesillustrated in FIG. 2A and FIGS. 8A to 8C, i.e., a structure where thethird transistor 113 is replaced by a diode element. The structureillustrated in FIG. 9A differs from the structure illustrated in FIG. 2Ain that a diode element 413 is provided as a substitute for the thirdtransistor 113, a first terminal of the diode element 413 is connectedto the second signal line 152 to which the second clock signal CK2 isinput, and that a second terminal of the diode element 413 is connectedto the node A. In addition, a different structure is illustrated in FIG.9B. The structure illustrated in FIG. 9B differs from the structureillustrated in FIG. 2A in that a diode-connected third transistor 513 isprovided as a substitute for the third transistor 113, a first terminalof the third transistor 513 is connected to the second signal line 152to which the second clock signal CK2 is input, and that a gate and asecond terminal of the third transistor 513 is connected to the node A.Note that in the circuit structure in FIG. 9B, as illustrated in FIG.9C, it is preferable that the duty ratio of the second clock signal CK2be 50% or more, that is, it is preferable that a period of an L level belonger than a period of an H level. With the structures in FIGS. 9A and9B, a wiring for controlling a potential of a gate of the transistor canbe eliminated. With the structure in FIG. 9B, reverse bias voltagehaving a polarity which is opposite to that of voltage used for turningon the transistor 513 can be applied. Thus, degradation of thetransistor due to electron trap at the time of turning on the transistor513 can be suppressed.

Note that in the structure of the pulse output circuit in theodd-numbered stage, as illustrated in FIG. 10A, the high power supplypotential VDD, the third clock signal CK3, or the second clock signalCK2 may be supplied to a signal line 156 which is connected to the firstterminal of the second transistor 112 (also referred to as a fifthsignal line). The structure illustrated in FIG. 10A differs from thestructure illustrated in FIG. 2A in that the signal line 156 forsupplying the high power supply potential VDD, the third clock signalCK3, or the second clock signal CK2 is connected to the first terminalof the second transistor 112. In addition, in the structure of the pulseoutput circuit in the odd-numbered stage, as illustrated in FIG. 10B,the third clock signal CK3 or the second clock signal CK2 may besupplied to a signal line 157 which is connected to the gate of thesecond transistor 112 (also referred to as a sixth signal line). Thestructure illustrated in FIG. 10B differs from the structure illustratedin FIG. 2A in that the signal line 157 for supplying the third clocksignal CK3 or the second clock signal CK2 is connected to the gate ofthe second transistor 112. Further, with the structures in FIGS. 10A and10B, reverse bias voltage having a polarity which is opposite to that ofvoltage used for turning on the transistor 112 can be applied. Thus,degradation of the transistor due to electron trap at the time ofturning on the transistor 112 can be suppressed. Furthermore, with thestructure in FIG. 10B, the transistor 112 is repeatedly turned on or offin accordance with the third clock signal CK3 or the second clock signalCK2. Thus, the preceding stage signal OUT_N−1 can be input to the node Aevery given period. Accordingly, the potential of the node A can be setat a stable potential.

As described above, in the semiconductor device in this embodiment,malfunctions due to input signals can be suppressed, so that displaydefects can be reduced. Therefore, a correction circuit or the like forsuppressing malfunctions of a circuit is not needed, so that a secondaryadvantage such as improvement in display quality, reduction in the sizeof a display device, reduction in cost, or reduction in the size of aframe can be obtained.

Note that the contents described in each drawing in this embodiment canbe freely combined with or replaced with the contents described in anyof the other embodiments as appropriate.

Embodiment 2

In this embodiment, examples of semiconductor devices are specificallydescribed. The semiconductor device in this embodiment is described inorder to describe the structure of the semiconductor device inEmbodiment 1, particularly the structure in FIG. 1D, more specifically.The semiconductor device in this embodiment can be used for a flip flop,a shift register, a gate driver, a source driver, a display device, orthe like, for example. Note that the semiconductor device in thisembodiment can also be referred to as a flip flop or a driver circuit.

First, an example of the semiconductor device in this embodiment isdescribed with reference to FIG. 11A. The semiconductor device in FIG.11A is similar to the semiconductor device in FIG. 1D, and a timingchart in FIG. 11B is similar to the timing chart in FIG. 2B. Thus, thedescription in Embodiment 1 is incorporated for detailed description.

In the first period T1, the operation of the first half is illustratedin FIG. 12A as the period T1-1. Note that “the first half” here refersto a period before the second clock signal CK2 becomes an H-level signalamong predetermined potentials supplied to the signal lines in the firstperiod T1. In the period T1-1, the preceding stage signal OUT_N−1, thefirst clock signal CK1, and the second clock signal CK2 are an H-levelsignal, an L-level signal, and an L-level signal, respectively.Accordingly, the potential of the node A is at a potential obtained byaddition of the threshold voltage to the low power supply potential VSS(VSS+Vth), so that the first and second transistors 111 and 112 areturned on and the third transistor 113 is turned off, as illustrated inthe diagram. Then, current flows through the first transistor 111 asindicated by dashed arrows in FIG. 12A. After that, when the potentialof the node A rises from VSS+Vth to VDD-Vth, the first transistor 111 isturned off. Further, when the potential of the node A rises to VDD-Vth,the control circuit 131 controls the potential of the node B so that thepotential of the node B is lowered and the fourth and fifth transistors114 and 115 are turned off. Next, the operation of the latter half inthe first period T1 is illustrated in FIG. 12B as the period T1-2. Notethat “the latter half” here refers to a period during which the secondclock signal CK2 is an H-level signal or an L-level signal after theH-level signal among the predetermined potentials supplied to the signallines in the first period T1. In the period T1-2, the preceding stagesignal OUT_N−1, the first clock signal CK1, and the second clock signalCK2 are an H-level signal, an L-level signal, and an H-level signal(changed to an L-level signal later), respectively. Then, the potentialof the node A is not particularly changed from VDD-Vth, so that thefirst transistor 111 is turned on, the second transistor 112, the fourthtransistor 114, and the fifth transistor 115 are turned off, and thethird transistor 113 is turned on or off, as illustrated in the diagram.Then, current flows as indicated by dashed arrows in FIG. 12B.

Next, in the second period T2, the first clock signal CK1, the precedingstage signal OUT_N−1, and the reset signal OUT_N+2 are an H-levelsignal, an L-level signal, and an L-level signal, respectively.Accordingly, the potential of the output signal OUT_N rises and thepotential of the node A which is set to be in a floating state bybootstrap operation rises. Thus, current flows as indicated by dashedarrows in FIG. 13 and an H-level signal is output as the output signalOUT_N. Further, when the potential of the node A is higher than VDD-Vth,as in the previous period, the control circuit 131 controls thepotential of the node B so that the potential of the node B is loweredand the fourth and fifth transistors 114 and 115 are turned off.

Next, in the third period T3, the operation of the first half isillustrated in FIG. 14A as the period T3-1. Note that “the first half”here refers to a period before the second clock signal CK2 becomes anH-level signal among predetermined potentials supplied to the signallines in the third period T3. In the period T3-1, the first clock signalCK1, the preceding stage signal OUT_N−1, the second clock signal CK2 areL-level signals. In this case, since the potential of the node A ishigher than the potential VDD+Vth by the bootstrap operation in thesecond period T2, the first transistor 111 is kept on. Further, when thepotential of the node A is higher than VDD+Vth, as in the previousperiod, the control circuit 131 controls the potential of the node B sothat the potential of the node B is lowered and the fourth and fifthtransistors 114 and 115 are turned off. Then, current flows from theterminal outputting the output signal OUT_N whose potential is at an Hlevel as indicated by dashed arrows in FIG. 14B, so that the potentialof the output signal OUT_N decreases to an L level. After that, withcapacitive coupling due to parasitic capacitance of the first transistor111, the potential of the node A decreases to around VDD-Vth. Thus, thepotential of the output signal OUT_N is at an L level. In the periodT3-1 in the third period T3, the first transistor 111 is kept on bykeeping the potential of the node A at a high potential. When the firsttransistor 111 is on in the period T3-1 in the third period 13, thefirst clock signal CK1 whose potential is at an L level can be suppliedas the output signal OUT_N through the first transistor 111. Since thechannel width of the first transistor 111 is larger than the channelwidths of other transistors (the fourth and fifth transistors 114 and115) because the first transistor 111 is used for driving a gate line, alarge amount of current can flow and the fall time of the output signalOUT_N can be shortened. Next, the operation of the latter half in thethird period T3 is illustrated in FIG. 14B as the period T3-2. Note that“the latter half” here refers to a period during which the second clocksignal CK2 is an H-level signal or an L-level signal after the H-levelsignal among the predetermined potentials supplied to the signal linesin the third period T3. In the period T3-2, the preceding stage signalOUT_N−1, the first clock signal CK1, and the second clock signal CK2 arean L-level signal, an L-level signal, and an H-level signal (changed toan L-level signal later), respectively. Then, current flows as indicatedby the dashed arrows in FIG. 14B. Thus, the second transistor 112 isturned off, the third transistor 113 is turned on, and the potential ofthe node A is at an L level. Then, when the potential of the node A isset at an L level, the control circuit 131 controls the potential of thenode B so that the potential of the node B is raised and the fourth andfifth transistors 114 and 115 are turned on.

Next, in the fourth period T4, conduction/non-conduction of each wiringand each transistor in a period during which the second clock signal CK2is an L-level signal is illustrated in FIG. 15A as the period T4-1. Inthe period T4-1, the preceding stage signal OUT_N−1 and the first clocksignal CK1 are an L-level signal and a signal whose potential isswitched between an H level and an L level, respectively. In this case,since the potential of the node A is set at a potential of an L-levelsignal through the operation in the third period T3, the firsttransistor 111 is kept off and the fourth and fifth transistors 114 and115 are kept on by the control circuit 131. Thus, the potential of theoutput signal OUT_N is at an L level. The operation of the latter halfin the fourth period T4 is illustrated in FIG. 15B as the period T4-2.Note that “the latter half” here refers to a period during which thesecond clock signal CK2 is an H-level signal in the fourth period T4. Inthe period. T4-2, the preceding stage signal OUT_N−1 and the first clocksignal CK1 are L-level signals. Further, since the second clock signalCK2 is an H-level signal in the period T4-2, the third transistor 113 isturned on and the first and second transistors 111 and 112 are turnedoff. Accordingly, current flows as indicated by dashed arrows in FIG.15B. Thus, the second transistor 112 is turned oft the third transistor113 is turned on, and the potential of the node A is at an L level.Then, when the potential of the node A is set at an L level, the controlcircuit 131 controls the potential of the node B so that the potentialof the node B is raised and the fourth and fifth transistors 114 and 115are turned on.

As described above, with the structure in FIGS. 1A to 1C which is thestructure in this embodiment, by setting the potential of the secondclock signal CK2 at an H level after setting the potential of the secondclock signal CK2 at an L level in the period T3-1 in the third periodT3, the first clock signal CK1 which is at an L level can be outputthrough the first transistor 111, and the fall time of the output signalOUT_N can be shortened. Further, by setting the potential of the secondclock signal CK2 at an H level after setting the potential of the secondclock signal CK2 at an L level in the period T3-2 in the third periodT3, the first transistor 111 can be turned off before the first clocksignal CK1 is set at an H level again. Thus, the first clock signal CK1which is at an H level can be prevented from being output through thefirst transistor 111. Accordingly, the fall time of the output signalOUT_N can be shortened and the rise in the potential of the outputsignal OUT_N can be prevented.

Next, in this embodiment, an example of a specific circuit structure ofthe control circuit 131 illustrated in FIG. 11A is described.

As illustrated in FIG. 11A, the control circuit 131 illustrated in FIG.16A is connected to the node A, the node B, the first power supply line141 to which a high power supply potential is supplied, and the secondpower supply line 142 to which a low power supply potential is supplied,and includes n-channel transistors 1601 and 1602. A first terminal ofthe transistor 1601, which is connected to the first power supply line141, is connected to a gate of the transistor 1601. A gate of thetransistor 1602 is connected to the node A. A second terminal of thetransistor 1602 is connected to the second power supply line 142. Asecond terminal of the transistor 1601, a first terminal of thetransistor 1602, and the node B are connected to each other. Further,the control circuit 131 which is illustrated in FIG. 16B and has adifferent structure is connected to the node A, the node B, the firstpower supply line 141 to which a high power supply potential issupplied, and the second power supply line 142 to which a low powersupply potential is supplied, and includes the n-channel transistors1601 and, 1602, and n-channel transistors 1603 and 1604. The firstterminal of the transistor 1601, which is connected to the first powersupply line 141, is connected to the gate of the transistor 1601. Thegate of the transistor 1602 is connected to the node A and a gate of thetransistor 1604. The second terminal of the transistor 1602 is connectedto the second power supply line 142. The second terminal of thetransistor 1601, the first terminal of the transistor 1602, and a gateof the transistor 1603 are connected to each other. A first terminal ofthe transistor 1603 is connected to the first power supply line 141. Asecond terminal of the transistor 1604 is connected to the second powersupply line 142. A second terminal of the transistor 1603, a firstterminal of the transistor 1604, and the node B are connected to eachother.

In addition, circuit structures which are different from the structuresin FIGS. 16A and 16B are described. Unlike the structure in FIG. 11A,the control circuit 131 illustrated in FIG. 17A is connected to the nodeA, the node B, the first power supply line 141 to which a high powersupply potential is supplied, the second power supply line 142 to whicha low power supply potential is supplied, and a wiring 1651 to which thethird clock signal CK3 is input (also referred to as a signal line), andincludes the n-channel transistors 1601 and, 1602, and an n-channeltransistor 1605. The first terminal of the transistor 1601, which isconnected to the first power supply line 141, is connected to the gateof the transistor 1601. The gate of the transistor 1602 is connected tothe node A. The second terminal of the transistor 1602 is connected tothe second power supply line 142. The second terminal of the transistor1601, the first terminal of the transistor 1602, the first terminal ofthe transistor 1605, and the node B are connected to each other. A gateof the transistor 1605 is connected to the wiring 1651. A secondterminal of the transistor 1605 is connected to the second power supplyline 142. Further, the control circuit 131 which is illustrated in FIG.17B and has a different structure is connected to the node A, the nodeB, the first power supply line 141 to which a high power supplypotential is supplied, the second power supply line 142 to which a lowpower supply potential is supplied, and the wiring 1651 to which thethird clock signal CK3 is input, and includes the n-channel transistors1601, 1602, 1603, 1604, and 1605 and an n-channel transistor 1606. Thefirst terminal of the transistor 1601, which is connected to the firstpower supply line 141, is connected to the gate of the transistor 1601.The gate of the transistor 1602 is connected to the node A and the gateof the transistor 1604. The second terminal of the transistor 1602 isconnected to the second power supply line 142. The second terminal ofthe transistor 1601, the first terminal of the transistor 1602, a firstterminal of the transistor 1605, and the gate of the transistor 1603 areconnected to each other. The first terminal of the transistor 1603 isconnected to the first power supply line 141. The second terminal of thetransistor 1604 is connected to the second power supply line 142. A gateof the transistor 1605 is connected to the wiring 1651 and a gate of thetransistor 1606. The second terminal of the transistor 1605 is connectedto the second power supply line 142. The second terminal of thetransistor 1603, the first terminal of the transistor 1604, a firstterminal of the transistor 1606, and the node B are connected to eachother. By provision of the transistor 1605 whose gate is supplied withthe third clock signal CK3, the potential of the node B can berepeatedly switched between an H level and an L level in the fourthperiod T4. Thus, a period during which the transistors 114 and 115 areon can be shortened, so that degradation of the transistors can besuppressed.

In addition, a circuit structure which is different from the structuresin FIGS. 16A and 16B and FIGS. 17A and 17B is described. Unlike thestructure in FIG. 11A, the control circuit 131 illustrated in FIG. 17Cis connected to the node A, the node B, the wiring 1651 to which thefirst clock signal is input, and the second power supply line 142 towhich a low power supply potential is supplied, and includes a capacitor1611 and an n-channel transistor 1612. A first electrode (also referredto as a first terminal or one of electrodes) of the capacitor 1611 isconnected to the wiring 1651. The gate of the transistor 1602 isconnected to the node A. The second terminal of the transistor 1602 isconnected to the power supply line 142. A second electrode (alsoreferred to as a second terminal or the other of the electrodes) of thecapacitor 1611, the first terminal of the transistor 1602, and the nodeB are connected to each other. By provision of the capacitor 1611,operation which is similar to the operation when a transistor isprovided can be realized, the amount of steady-state current can bereduced, and power consumption can be reduced.

In addition, a circuit structure which is different from the structuresin FIGS. 16A and 16B and FIGS. 17A to 17C is described. Unlike thestructure in FIG. 11A, the control circuit 131 illustrated in FIG. 17Dis connected to the node A, the node B, the wiring 1651 to which thefirst clock signal is input, and the second power supply line 142 towhich a low power supply potential is supplied, and includes then-channel transistors 1601, 1602, 1603, and 1604. The first terminal ofthe transistor 1601, which is connected to the wiring 1651, is connectedto the gate of the transistor 1601. The gate of the transistor 1602 isconnected to the node A and the gate of the transistor 1604. The secondterminal of the transistor 1602 is connected to the second power supplyline 142. The second terminal of the transistor 1601, the first terminalof the transistor 1602, and the gate of the transistor 1603 areconnected to each other. The first terminal of the transistor 1603 isconnected to the wiring 1651. The second terminal of the transistor 1604is connected to the second power supply line 142. The second terminal ofthe transistor 1603, the first terminal of the transistor 1604, and thenode B are connected to each other. With the structure of the controlcircuit in FIG. 17D, the potential of the node B can be repeatedlyswitched between an H level and an L level in the fourth period T4.Thus, a period during which the transistors 114 and 115 are on can beshortened, so that degradation of the transistors 114 and 115 can besuppressed. Further, when the node B outputs an H-level signal, thelevel of gate-source voltage of the transistors 114 and 115 can beraised. Thus, the channel widths of the transistors 114 and 115 can bedecreased or delay of an output signal can be reduced.

As described above, in the semiconductor device in this embodiment,malfunctions due to input signals can be suppressed as in Embodiment 1,so that display defects can be reduced. Therefore, a correction circuitor the like for suppressing malfunctions of a circuit is not needed, sothat a secondary advantage such as reduction in the size of a displaydevice, reduction in cost, or reduction in the size of a frame can beobtained.

Note that the contents described in each drawing in this embodiment canbe freely combined with or replaced with the contents described in anyof the other embodiments as appropriate.

Embodiment 3

In this embodiment, examples of display devices are described.

First, an example of a system block of a liquid crystal display deviceis described with reference to FIG. 18A. The liquid crystal displaydevice includes a circuit 5361, a circuit 5362, a circuit 5363_1, acircuit 5363_2, a pixel portion 5364, a circuit 5365, and a lightingdevice 5366. A plurality of wirings 5371 which are extended from thecircuit 5362 and a plurality of wirings 5372 which are extended from thecircuit 5363_1 and the circuit 5363_2 are provided in the pixel portion5364. In addition, pixels 5367 which include display elements such asliquid crystal elements are provided in matrix in respective regionswhere the plurality of wirings 5371 and the plurality of wirings 5372intersect with each other.

The circuit 5361 has a function of outputting a signal, voltage,current, or the like to the circuit 5362, the circuit 5363_1, thecircuit 5363_2, and the circuit 5365 in response to a video signal 5360and can serve as a controller, a control circuit, a timing generator, apower supply circuit, a regulator, or the like. In this embodiment, forexample, the circuit 5361 supplies a signal line driver circuit startsignal (SSP), a signal line driver circuit clock signal (SCK), a signalline driver circuit inverted clock signal (SCKB), video signal data(DATA), or a latch signal (LAT) to the circuit 5362. Alternatively, forexample, the circuit 5361 supplies a scan line driver circuit startsignal (GSP), a scan line driver circuit clock signal (GCK), or a scanline driver circuit inverted clock signal (GCKB) to the circuit 5363_1and the circuit 5363_2. Alternatively, the circuit 5361 outputs abacklight control signal (BLC) to the circuit 5365. Note that thisembodiment is not limited to this. The circuit 5361 can supply a varietyof signals, voltages, currents, or the like to the circuit 5362, thecircuit 5363_1, the circuit 5363_2, and the circuit 5365.

The circuit 5362 has a function of outputting video signals to theplurality of wirings 5371 in response to a signal supplied from thecircuit 5361 (e.g., SSP, SCK, SCKB, DATA, or LAT) and can serve as asignal line driver circuit. The circuit 5363_1 and the circuit 5363_2each have a function of outputting scan signals to the plurality ofwirings 5372 in response to a signal supplied from the circuit 5361(e.g., GSP, GCK, or GCKB) and can serve as a scan line driver circuit.The circuit 5365 has a function of controlling the luminance (or averageluminance) of the lighting device 5366 by controlling the amount ofelectric power supplied to the lighting device 5366, time to supply theelectric power to the lighting device 5366, or the like in response tothe backlight control signal (BLC) which is supplied from the circuit5361, and can serve as a power supply circuit.

Note that in the case where video signals are input to the plurality ofwirings 5371, the plurality of wirings 5371 can serve as signal lines,video signal lines, source lines, or the like. In the case where scansignals are input to the plurality of wirings 5372, the plurality ofwirings 5372 can serve as signal lines, scan lines, gate lines, or thelike. Note that this embodiment is not limited to this.

Note that in the case where the same signal is input to the circuit5363_1 and the circuit 5363_2 from the circuit 5361, scan signals outputfrom the circuit 5363_1 to the plurality of wirings 5372 and scansignals output from the circuit 5363_2 to the plurality of wirings 5372have approximately the same timings in many cases. Therefore, a loadcaused by driving of the circuit 5363_1 and the circuit 5363_2 can bereduced. Accordingly, the display device can be made larger.Alternatively, the display device can have higher definition.Alternatively, since the channel width of transistors included in thecircuit 5363_1 and the circuit 5363_2 can be decreased, a display devicewith a narrower frame can be obtained. Note that this embodiment is notlimited to this. The circuit 5361 can supply different signals to thecircuit 5363_1 and the circuit 5363_2.

Note that one of the circuit 5363_1 and the circuit 5363_2 can beeliminated.

Note that a wiring such as a capacitor line, a power supply line, or ascan line can be additionally provided in the pixel portion 5364. Then,the circuit 5361 can output a signal, voltage, or the like to such awiring. Alternatively, a circuit which is similar to the circuit 5363_1or the circuit 5363_2 can be additionally provided. The additionallyprovided circuit can output a signal such as a scan signal to theadditionally provided wiring.

Note that the pixel 5367 can include a light-emitting element such as anEL element as a display element. In this case, as illustrated in FIG.18B, since the display element can emit light, the circuit 5365 and thelighting device 5366 can be eliminated. In addition, in order to supplyelectric power to the display element, a plurality of wirings 5373 whichcan serve as power supply lines can be provided in the pixel portion5364. The circuit 5361 can supply power supply voltage called voltage(ANO) to the wirings 5373. The wirings 5373 can be separately connectedto the pixels in accordance with color elements or connected to all thepixels.

Note that FIG. 18B illustrates an example in which the circuit 5361supplies different signals to the circuit 5363_1 and the circuit 5363_2.The circuit 5361 supplies signals such as a scan line driver circuitstart signal (GSP1), a scan line driver circuit clock signal (GCK1), anda scan line driver circuit inverted clock signal (GCKB1) to the circuit5363_1. In addition, the circuit 5361 supplies signals such as a scanline driver circuit start signal (GSP2), a scan line driver circuitclock signal (GCK2), and a scan line driver circuit inverted clocksignal (GCKB2) to the circuit 5363_2. In this case, the circuit 5363_1can scan only wirings in odd-numbered rows of the plurality of wirings5372 and the circuit 5363_2 can scan only wirings in even-numbered rowsof the plurality of wirings 5372. Thus, the driving frequency of thecircuit 5363_1 and the circuit 5363_2 can be lowered, so that powerconsumption can be reduced. Alternatively, an area in which a flip-flopof one stage can be laid out can be made larger. Therefore, a displaydevice can have higher definition. Alternatively, a display device canbe made larger. Note that this embodiment is not limited to this. As inFIG. 18A, the circuit 5361 can supply the same signal to the circuit5363_1 and the circuit 5363_2.

Note that as in FIG. 18B, the circuit 5361 can supply different signalsto the circuit 5363_1 and the circuit 5363_2 in FIG. 18A.

Thus far, the example of a system block of a display device isdescribed.

Next, examples of structures of the display devices are described withreference to FIGS. 19A to 19E.

In FIG. 19A, circuits which have a function of outputting signals to thepixel portion 5364 (e.g., the circuit 5362, the circuit 5363_1, and thecircuit 5363_2) are formed over the same substrate 5380 as the pixelportion 5364. In addition, the circuit 5361 is formed over a differentsubstrate from the pixel portion 5364. In this manner, since the numberof external components is reduced, reduction in cost can be achieved.Alternatively, since the number of signals or voltages input to thesubstrate 5380 is reduced, the number of connections between thesubstrate 5380 and the external component can be reduced. Therefore,improvement in reliability or the increase in yield can be achieved.

Note that in the case where the circuit is formed over a differentsubstrate from the pixel portion 5364, the substrate can be mounted onan FPC (flexible printed circuit) by TAB (tape automated bonding).Alternatively, the substrate can be mounted on the same substrate 5380as the pixel portion 5364 by COG (chip on glass).

Note that in the case where the circuit is formed over a differentsubstrate from the pixel portion 5364, a transistor formed using asingle crystal semiconductor can be formed on the substrate. Therefore,the circuit formed over the substrate can have advantages such asimprovement in driving frequency, improvement in driving voltage, andsuppression of variations in output signals.

Note that a signal, voltage, current, or the like is input from anexternal circuit through an input terminal 5381 in many cases.

In FIG. 19B, circuits with low driving frequency (e.g., the circuit5363_1 and the circuit 5363_2) are formed over the same substrate 5380as the pixel portion 5364. In addition, the circuit 5361 and the circuit5362 are formed over a different substrate from the pixel portion 5364.In this manner, since the circuit formed over the substrate 5380 can beformed using a transistor with low mobility, a non-single-crystalsemiconductor, an amorphous semiconductor, a microcrystallinesemiconductor, an organic semiconductor, an oxide semiconductor, or thelike can be used for a semiconductor layer of the transistor.Accordingly, the increase in the size of the display device, reductionin the number of steps, reduction in cost, improvement in yield, or thelike can be achieved.

Note that as illustrated in FIG. 19C, part of the circuit 5362 (acircuit 5362 a) can be formed over the same substrate 5380 as the pixelportion 5364 and the other part of the circuit 5362 (a circuit 5362 b)can be formed over a different substrate from the pixel portion 5364.The circuit 5362 a includes a circuit which can be formed using atransistor with low mobility (e.g., a shift register, a selector, or aswitch) in many cases. In addition, the circuit 5362 b includes acircuit which is preferably formed using a transistor with high mobilityand few variations in characteristics (e.g., a shift register, a latchcircuit, a buffer circuit, a DA converter circuit, or an AD convertercircuit) in many cases. In this manner, as in FIG. 19B, anon-single-crystal semiconductor, an amorphous semiconductor, amicrocrystalline semiconductor, an organic semiconductor, an oxidesemiconductor, or the like can be used for a semiconductor layer of thetransistor. Further, reduction in external components can be achieved.

In FIG. 19D, circuits which have a function of outputting signals to thepixel portion 5364 (e.g., the circuit 5362, the circuit 5363_1, and thecircuit 5363_2) and a circuit which has a function of controlling thesecircuits (e.g., the circuit 5361) are formed over a different substratefrom the pixel portion 5364. In this manner, since the pixel portion andperipheral circuits thereof can be formed over different substrates,improvement in yield can be achieved.

Note that as in FIG. 19D, the circuit 5363_1 and the circuit 5363_2 canbe formed over a different substrate from the pixel portion 5364 inFIGS. 19A to 19C.

In FIG. 19E, part of the circuit 5361 (a circuit 5361 a) is formed overthe same substrate 5380 as the pixel portion 5364 and the other part ofthe circuit 5361 (a circuit 5361 b) is formed over a different substratefrom the pixel portion 5364. The circuit 5361 a includes a circuit whichcan be formed using a transistor with low mobility (e.g., a switch, aselector, or a level shift circuit) in many cases. In addition, thecircuit 5361 b includes a circuit which is preferably formed using atransistor with high mobility and few variations (e.g., a shiftregister, a timing generator, an oscillator, a regulator, or an analogbuffer) in many cases.

Note that also in FIGS. 19A to 19D, the circuit 5361 a can be formedover the same substrate as the pixel portion 5364 and the circuit 5361 bcan be formed over a different substrate from the pixel portion 5364.

Here, for the circuits 5363_1 and 5363_2, the semiconductor device orthe shift register in Embodiment 1 or 2 can be used. In this case, whenthe circuit 5363_1, the circuit 5363_2, and the pixel portion are formedover the same substrate, all the transistors that are formed over thesubstrate can be n-channel transistors or p-channel transistors.Therefore, reduction in the number of steps, improvement in yield,improvement in reliability, or reduction in cost can be achieved. Inparticular, in the case where all the transistors are n-channeltransistors, a non-single-crystal semiconductor, an amorphoussemiconductor, a microcrystalline semiconductor, an organicsemiconductor, an oxide semiconductor, or the like can be used for asemiconductor layer of each transistor. Thus, the increase in the sizeof the display device, reduction in cost, improvement in yield, or thelike can be achieved.

In the semiconductor device or the shift register in Embodiment 1 or 2,the channel width of the transistor can be decreased. Thus, a layoutarea can be reduced, so that the size of a frame can be reduced.Alternatively, since the layout area can be reduced, resolution can beincreased.

Alternatively, in the semiconductor device or the shift register inEmbodiment 1 or 2, parasitic capacitance can be reduced. Thus, powerconsumption can be reduced. Alternatively, the current supply capabilityof an external circuit can be decreased, or the size of the externalcircuit or the size of a display device including the external circuitcan be reduced.

Note that in a transistor in which a non-single-crystal semiconductor,an amorphous semiconductor, a microcrystalline semiconductor, an organicsemiconductor, an oxide semiconductor, or the like is used for asemiconductor layer, degradation in characteristics, such as theincrease in the threshold voltage or reduction in mobility, oftenoccurs. However, in the semiconductor device or the shift register inEmbodiment 1 or 2, degradation in characteristics of a transistor can besuppressed, so that the life of a display device can be prolonged.

Note that the semiconductor device or the shift register in Embodiment 1or 2 can be used as part of the circuit 5362. For example, the circuit5362 a can include the semiconductor device or the shift register inEmbodiment 1 or 2.

Embodiment 4

In this embodiment, an example of a signal line driver circuit isdescribed. Note that the signal line driver circuit can be referred toas a semiconductor device or a signal generation circuit.

An example of a signal line driver circuit is described with referenceto FIG. 20A. The signal line driver circuit includes a circuit 2001 anda circuit 2002. The circuit 2002 includes a plurality of circuits 2002_1to 2002_N (N is a natural number). The circuits 2002_1 to 2002_N eachinclude a plurality of transistors 2003_1 to 2003_k (k is a naturalnumber). The transistors 2003_1 to 2003_k are n-channel transistors.However, this embodiment is not limited to this. The transistors 2003_1to 2003_k can be either p-channel transistors or CMOS switches.

The connection relation of the signal line driver circuit is describedtaking the circuit 2002_1 as an example. First terminals of thetransistors 2003_1 to 2003_k are connected to wirings 2004_1 to 2004_k,respectively. Second terminals of the transistors 2003_1 to 2003_k areconnected to wirings S1 to Sk, respectively. Gates of the transistors2003_1 to 2003_k are connected to the wiring 2004_1.

The circuit 2001 has a function of sequentially outputting high-levelsignals to wirings 2005_1 to 2005_N or a function of sequentiallyselecting the circuits 2002_1 to 2002_N. In this manner, the circuit2001 functions as a shift register. However, this embodiment is notlimited to this. The circuit 2001 can output high-level signals to thewirings 2005_1 to 2005_N in different orders. Alternatively, thecircuits 2002_1 to 2002_N can be selected in different orders. In thismanner, the circuit 2001 can function as a decoder.

The circuit 2002_1 has a function of controlling conduction between thewirings 2004_1 to 2004_k and the wrings S1 to Sk. Alternatively, thecircuit 2001_1 has a function of supplying potentials of the wirings2004_1 to 2004_k to the wirings S1 to Sk. In this manner, the circuit2002_1 can function as a selector. However, this embodiment is notlimited to this. Note that each of the circuits 2002_2 to 2002_N canhave a function which is similar to the function of the circuit 2002_1.

Each of the transistors 2003_1 to 2003_N has a function of controllingthe conduction between the wirings 2004_1 to 2004_k and the wrings S1 toSk. Alternatively, each of the transistors 2003_1 to 2003_N has afunction of supplying the potentials of the wirings 2004_1 to 2004_k tothe wirings S1 to Sk. For example, the transistor 2003_1 has a functionof controlling conduction between the wiring 2004_1 and the wiring S1.Alternatively, the transistor 2003_1 has a function of supplying thepotential of the wiring 2004_1 to the wiring S1. In this manner, each ofthe transistors 2003_1 to 2003_N functions as a switch. However, thisembodiment is not limited to this.

Note that different signals are supplied to the wirings 2004_1 to 2004_kin many cases. The signals are analog signals corresponding to imagedata or image signals in many cases. In this manner, the signals canfunction as video signals. Thus, the wirings 2004_1 to 2004_k canfunction as signal lines. However, this embodiment is not limited tothis. For example, depending on the pixel structure, the signals can bedigital signals, analog voltage, or analog current.

Next, the operation of the signal line driver circuit in FIG. 20A isdescribed with reference to a timing chart in FIG. 20B. FIG. 20Billustrates examples of signals 2015_1 to 2015N and signals 2014_1 to2014_k. The signals 2015_1 to 2015_N are examples of output signals inthe circuit 2001. The signals 2014_1 to 2014_k are examples of signalswhich are input to the wirings 2004_1 to 2004_k. Note that one operationperiod of the signal line driver circuit corresponds to one gateselection period in a display device. For example, one gate selectionperiod is divided into a period T0 to TN. The period T0 is a period forapplying precharge voltage to pixels in a selected row concurrently andcan serve as a precharge period. Each of the periods T1 to TN is aperiod during which video signals are written to pixels in the selectedrow and can serve as a writing period.

First, in the period T0, the circuit 2001 supplies high-level signals tothe wirings 2005_1 to 2005_N. Then, for example, the transistors 2003_1to 2003 k are turned on in the circuit 2002_1, so that the wirings2004_1 to 2004_k and the wirings S1 to Sk are brought into conduction.In this case, precharge voltage Vp is applied to the wirings 2004_1 to2004_k. Thus, the precharge voltage Vp is output to the wirings S1 to Skthrough the transistors 2003_1 to 2003_k. Thus, the precharge voltage Vpis written to the pixels in the selected row, so that the pixels in theselected row are precharged.

In the periods T1 to TN, the circuit 2001 sequentially outputshigh-level signals to the wirings 2005_1 to 2005_N. For example, in theperiod T1, the circuit 2001 outputs a high-level signal to the wirings2005_1. Then, the transistors 2003_1 to 2003 k are turned on, so thatthe wirings 2004_1 to 2004_k and the wirings S1 to Sk are brought intoconduction. In this case, Data (S1) to Data (Sk) are input to thewirings 2004_1 to 2004_k, respectively. The Data (S1) to Data (Sk) areinput to pixels in a selected row in a first to k-th columns through thetransistors 2003_1 to 2003_k, respectively. Thus, in the periods T1 toTN, video signals are sequentially written to the pixels in the selectedrow by k columns.

By writing video signals to pixels by a plurality of columns, the numberof video signals or the number of wirings can be reduced. Thus, thenumber of connections to an external circuit can be reduced, so thatimprovement in yield, improvement in reliability, reduction in thenumber of components, and/or reduction in cost can be achieved.Alternatively, by writing video signals to pixels by a plurality ofcolumns, writing time can be extended. Thus, shortage of writing ofvideo signals can be prevented, so that display quality can be improved.

Note that by increasing k, the number of connections to the externalcircuit can be reduced. However, if k is too large, time to writesignals to pixels would be shortened. Thus, it is preferable that k≤6.It is more preferable that k≤3. It is much more preferable that k=2.However, this embodiment is not limited to this.

In particular, in the case where the number of color elements of a pixelis n (n is a natural number), k=n or k=n×d (d is a natural number) ispreferable. For example, in the case where the pixel is divided intocolor elements of red (R), green (G), and blue (B), k=3 or k=3×d ispreferable. However, this embodiment is not limited to this. Forexample, in the case where the pixel is divided into m (m is a naturalnumber) pieces of pixels (hereinafter also referred to as subpixels),k=m or k=m×d is preferable. For example, in the case where the pixel isdivided into two subpixels, k=2 is preferable. Alternatively, in thecase where the number of color elements of the pixel is n, k=m×n ork=m×n×d is preferable. However, this embodiment is not limited to this.

Note that the drive frequencies of the circuit 2001 and the circuit 2002are low in many cases, so that the circuit 2001 and the circuit 2002 canbe formed over the same substrate as a pixel portion 2007 as illustratedin FIG. 20C. Thus, the number of connections between the substrate overwhich the pixel portion is formed and an external circuit can bereduced, so that improvement in yield, improvement in reliability,reduction in the number of components, or reduction in cost can beachieved, for example. In particular, when a signal line driver circuit2006 is formed over the same substrate as the pixel portion 2007, thenumber of connections to the external circuit can be further reduced.However, this embodiment is not limited to this. For example, asillustrated in FIG. 20D, the circuit 2001 can be formed over a substratewhich is different from the substrate over which the pixel portion 2007is formed, and the circuit 2002 can be formed over the same substrate asthe pixel portion 2007. Also in this case, the number of connectionsbetween the substrate over which the pixel portion is formed and theexternal circuit can be reduced, so that improvement in yield,improvement in reliability, reduction in the number of components, orreduction in cost can be achieved, for example. Alternatively, since thenumber of circuits which are formed over the same substrate as the pixelportion 2007 is made smaller, the size of a frame can be reduced.

Note that the semiconductor device or the shift register described inEmbodiment 1 or 2 can be used for the circuit 2001. In this case, allthe transistors included in the circuit 2001 can be n-channeltransistors or p-channel transistors. Therefore, reduction in the numberof steps, improvement in yield, or reduction in cost can be achieved.

Note that not only the transistors included in the circuit 2001 but alsoall the transistors included in the circuits 2002_1 to 2002_N can ben-channel transistors or p-channel transistors. Therefore, in the casewhere the circuit 2001 and the circuits 2002_1 to 2002_N are formed overthe same substrate as the pixel portion, reduction in the number ofsteps, improvement in yield, or reduction in cost can be achieved. Inparticular, in the case where all the transistors are n-channeltransistors, a non-single-crystal semiconductor, an amorphoussemiconductor, a microcrystalline semiconductor, an organicsemiconductor, an oxide semiconductor, or the like can be used for asemiconductor layer of each transistor. This is because the drivefrequencies of the circuit 2001 and the circuits 2002_1 to 2002_N arelow in many cases.

Embodiment 5

In this embodiment, examples of protection circuits are described.

First, an example of a protection circuit is described with reference toFIG. 21A. A protection circuit 3000 is provided in order to prevent asemiconductor device (e.g., a transistor, a capacitor, or a circuit)which is connected to a wiring 3011, or the like from being damaged byESD (electrostatic discharge). The protection circuit 3000 includes atransistor 3001 and a transistor 3002. The transistor 3001 and thetransistor 3002 are n-channel transistors in many cases. However, thisembodiment is not limited to this. The transistor 3001 and thetransistor 3002 can be p-channel transistors.

A first terminal of the transistor 3001 is connected to a wiring 3012. Asecond terminal of the transistor 3001 is connected to the wiring 3011.A gate of the transistor 3001 is connected to the wiring 3011. A firstterminal of the transistor 3002 is connected to a wiring 3013. A secondterminal of the transistor 3002 is connected to the wiring 3011. A gateof the transistor 3002 is connected to the wiring 3013.

For example, a signal (e.g., a scan signal, a video signal, a clocksignal, a start signal, a reset signal, or a selection signal) orvoltage (e.g., negative power supply voltage, ground voltage, orpositive power supply voltage) can be supplied to the wiring 3011. Forexample, positive power supply voltage (VDD) is supplied to the wiring3012. For example, negative power supply voltage (VSS), ground voltage,or the like is supplied to the wiring 3013. However, this embodiment isnot limited to this.

When a potential of the wiring 3011 is between VSS and VDD, thetransistor 3001 and the transistor 3002 are turned off. Thus, voltage, asignal, or the like supplied to the wiring 3011 is supplied to thesemiconductor device which is connected to the wiring 3011. Note thatdue to an adverse effect of static electricity, a potential which ishigher or lower than power supply voltage is supplied to the wiring 3011in some cases. Then, the semiconductor device which is connected to thewiring 3011 might be broken by the potential which is higher or lowerthan the power supply voltage. In order to prevent such a semiconductordevice from being damaged by electrostatic discharge, the transistor3001 is turned on in the case where the potential which is higher thanthe power supply voltage is supplied to the wiring 3011. Then, sinceelectric charge accumulated in the wiring 3011 is transferred to thewiring 3012 through the transistor 3001, the potential of the wiring3011 is lowered. On the other hand, in the case where the potentialwhich is lower than the power supply voltage is supplied to the wiring3011, the transistor 3002 is turned on. Then, since the electric chargeaccumulated in the wiring 3011 is transferred to the wiring 3013 throughthe transistor 3002, the potential of the wiring 3011 is raised. Thus,the semiconductor device which is connected to the wiring 3011 can beprevented from being damaged by electrostatic discharge.

Note that in the structure illustrated in FIG. 21A, the transistor 3002can be eliminated, as illustrated in FIG. 21B. Alternatively, in thestructure illustrated in FIG. 21A, the transistor 3001 can beeliminated, as illustrated in FIG. 21C. However, this embodiment is notlimited to this.

Note that in the structures illustrated in FIGS. 21A to 21C, transistorscan be connected in series between the wiring 3011 and the wiring 3012,as illustrated in FIG. 21D. Alternatively, transistors can be connectedin series between the wiring 3011 and the wiring 3013. A first terminalof a transistor 3003 is connected to the wiring 3012. A second terminalof the transistor 3003 is connected to the first terminal of thetransistor 3001. A gate of the transistor 3003 is connected to the firstterminal of the transistor 3001. A first terminal of a transistor 3004is connected to the wiring 3013. A second terminal of the transistor3004 is connected to the first terminal of the transistor 3002. A gateof the transistor 3004 is connected to the first terminal of thetransistor 3004. However, this embodiment is not limited to this. Forexample, as illustrated in FIG. 21E, the gate of the transistor 3001 andthe gate of the transistor 3003 can be connected to each other.Alternatively, the gate of the transistor 3002 and the gate of thetransistor 3004 can be connected to each other.

Note that in the structures illustrated in FIGS. 21A to 21E, thetransistors can be connected in parallel between the wiring 3011 and thewiring 3012, as illustrated in FIG. 21F. Alternatively, the transistorscan be connected in parallel between the wiring 3011 and the wiring3013. The first terminal of the transistor 3003 is connected to thewiring 3012. The second terminal of the transistor 3003 is connected tothe wiring 3011. The gate of the transistor 3003 is connected to thewiring 3011. The first terminal of the transistor 3004 is connected tothe wiring 3013. The second terminal of the transistor 3004 is connectedto the wiring 3011. The gate of the transistor 3004 is connected to thewiring 3013.

Note that in the structures illustrated in FIGS. 21A to 21F, a capacitor3005 and a resistor 3006 can be connected in parallel between the gateof the transistor 3001 and the first terminal of the transistor 3001, asillustrated in FIG. 21Q Alternatively, a capacitor 3007 and a resistor3008 can be connected in parallel between the gate of the transistor3002 and the first terminal of the transistor 3002. Thus, breakage ordegradation of the protection circuit 3000 itself can be prevented. Forexample, in the case where a potential which is higher than power supplyvoltage is supplied to the wiring 3011, Vgs of the transistor 3001 israised. Thus, the transistor 3001 is turned on, so that the potential ofthe wiring 3011 is lowered. However, since high voltage is appliedbetween the gate of the transistor 3001 and the second terminal of thetransistor 3001, the transistor might be damaged or degraded. In orderto prevent damage or degradation of the transistor, a potential of thegate of the transistor 3001 is raised and Vgs of the transistor 3001 islowered. The capacitor 3005 is used for realizing this operation. Whenthe transistor 3001 is turned on, a potential of the first terminal ofthe transistor 3001 is raised instantaneously. Then, with capacitivecoupling of the capacitor 3005, the potential of the gate of thetransistor 3001 is raised. In this manner, Vgs of the transistor 3001can be lowered, and breakage or degradation of the transistor 3001 canbe suppressed. However, this embodiment is not limited to this. In asimilar manner, in the case where a potential which is lower than thepower supply voltage is supplied to the wiring 3011, a potential of thefirst terminal of the transistor 3002 is lowered instantaneously. Then,with capacitive coupling of the capacitor 3007, the potential of thegate of the transistor 3002 is lowered. In this manner, Vgs of thetransistor 3002 can be lowered, so that breakage or degradation of thetransistor 3002 can be suppressed.

Here, the protection circuits illustrated in FIGS. 21A to 210 can beused for various purposes. FIG. 22A illustrates a structure when aprotection circuit is provided in a gate signal line, for example. Inthis case, the wiring 3012 and the wiring 3013 can be connected to anyof wirings connected to a gate driver 3100. Thus, the number of powersources and the number of wirings can be reduced. FIG. 22B illustrates astructure when a protection circuit is provided in a terminal to which asignal or voltage is supplied from the outside such as an FPC, forexample. In this case, the wiring 3012 and the wiring 3013 can beconnected to any of external terminals. For example, the wiring 3012 isconnected to a terminal 3101 a, and the wiring 3013 is connected to aterminal 3101 b. In this case, in a protection circuit provided in theterminal 3101 a, the transistor 3001 can be eliminated. In a similarmanner, in a protection circuit provided in the terminal 3101 b, thetransistor 3002 can be eliminated. Thus, the number of transistors canbe reduced, so that a layout area can be reduced.

Embodiment 6

In this embodiment, examples of structures of transistors are describedwith reference to FIGS. 23A to 23C.

FIG. 23A illustrates an example of the structure of a top-gatetransistor or an example of the structure of a display device. FIG. 23Billustrates an example of the structure of a bottom-gate transistor oran example of the structure of a display device. FIG. 23C illustrates anexample of the structure of a transistor formed using a semiconductorsubstrate.

The transistor in FIG. 23A includes a substrate 5260; an insulatinglayer 5261 formed over the substrate 5260; a semiconductor layer 5262which is formed over the insulating layer 5261 and is provided with aregion 5262 a, a region 5262 b, a region 5262 c, a region 5262 d, and aregion 5262 e; an insulating layer 5263 formed so as to cover thesemiconductor layer 5262; a conductive layer 5264 formed over thesemiconductor layer 5262 and the insulating layer 5263; an insulatinglayer 5265 which is formed over the insulating layer 5263 and theconductive layer 5264 and is provided with openings; and a conductivelayer 5266 which is formed over the insulating layer 5265 and in theopenings formed in the insulating layer 5265.

The transistor in FIG. 23B includes a substrate 5300; a conductive layer5301 formed over the substrate 5300; an insulating layer 5302 formed soas to cover the conductive layer 5301; a semiconductor layer 5303 aformed over the conductive layer 5301 and the insulating layer 5302; asemiconductor layer 5303 b formed over the semiconductor layer 5303 a; aconductive layer 5304 formed over the semiconductor layer 5303 b and theinsulating layer 5302; an insulating layer 5305 which is formed over theinsulating layer 5302 and the conductive layer 5304 and is provided withan opening; and a conductive layer 5306 which is formed over theinsulating layer 5305 and in the opening formed in the insulating layer5305.

The transistor in FIG. 23C includes a semiconductor substrate 5352including a region 5353 and a region 5355; an insulating layer 5356formed over the semiconductor substrate 5352; an insulating layer 5354formed over the semiconductor substrate 5352; a conductive layer 5357formed over the insulating layer 5356; an insulating layer 5358 which isformed over the insulating layer 5354, the insulating layer 5356, andthe conductive layer 5357 and is provided with openings; and aconductive layer 5359 which is formed over the insulating layer 5358 andin the openings formed in the insulating layer 5358. Thus, a transistoris formed in each of a region 5350 and a region 5351.

Note that in each of the structures of the transistors illustrated inFIGS. 23A to 23C, as illustrated in FIG. 23A, over the transistor, it ispossible to form an insulating layer 5267 which is formed over theconductive layer 5266 and the insulating layer 5265 and is provided withan opening; a conductive layer 5268 which is formed over the insulatinglayer 5267 and in the opening formed in the insulating layer 5267; aninsulating layer 5269 which is formed over the insulating layer 5267 andthe conductive layer 5268 and is provided with an opening; alight-emitting layer 5270 which is formed over the insulating layer 5269and in the opening formed in the insulating layer 5269; and a conductivelayer 5271 formed over the insulating layer 5269 and the light-emittinglayer 5270.

Note that in each of the structures of the transistors illustrated inFIGS. 23A to 23C, as illustrated in FIG. 23B, over the transistor, it ispossible to form a liquid crystal layer 5307 which is formed over theinsulating layer 5305 and the conductive layer 5306 and a conductivelayer 5308 which is formed over the liquid crystal layer 5307.

The insulating layer 5261 can serve as a base film. The insulating layer5354 serves as an element isolation layer (e.g., a field oxide film).Each of the insulating layer 5263, the insulating layer 5302, and theinsulating layer 5356 can serve as a gate insulating film. Each of theconductive layer 5264, the conductive layer 5301, and the conductivelayer 5357 can serve as a gate electrode. Each of the insulating layer5265, the insulating layer 5267, the insulating layer 5305, and theinsulating layer 5358 can serve as an interlayer film or a planarizationfilm. Each of the conductive layer 5266, the conductive layer 5304, andthe conductive layer 5359 can serve as a wiring, an electrode of atransistor, an electrode of a capacitor, or the like. Each of theconductive layer 5268 and the conductive layer 5306 can serve as a pixelelectrode, a reflective electrode, or the like. The insulating layer5269 can serve as a partition wall. Each of the conductive layer 5271and the conductive layer 5308 can serve as a counter electrode, a commonelectrode, or the like.

As each of the substrate 5260 and the substrate 5300, a glass substrate,a quartz substrate, a single crystal substrate (e.g., a siliconsubstrate), an SOI substrate, a plastic substrate, a metal substrate, astainless steel substrate, a substrate including stainless steel foil, atungsten substrate, a substrate including tungsten foil, a flexiblesubstrate, or the like can be used, for example. As a glass substrate, abarium borosilicate glass substrate, an aluminoborosilicate glasssubstrate, or the like can be used, for example. For a flexiblesubstrate, a flexible synthetic resin such as plastics typified bypolyethylene terephthalate (PET), polyethylene naphthalate (PEN), orpolyether sulfone (PES), or acrylic can be used, for example.Alternatively, an attachment film (formed using polypropylene,polyester, vinyl, polyvinyl fluoride, polyvinyl chloride, or the like),paper including a fibrous material, a base material film (formed usingpolyester, polyamide, polyimide, an inorganic vapor deposition film,paper, or the like), or the like can be used.

As the semiconductor substrate 5352, for example, a single crystalsilicon substrate having n-type or p-type conductivity can be used. Forexample, the region 5353 is a region where an impurity is added to thesemiconductor substrate 5352 and serves as a well. For example, in thecase where the semiconductor substrate 5352 has p-type conductivity, theregion 5353 has n-type conductivity and serves as an n-well. On theother hand, in the case where the semiconductor substrate 5352 hasn-type conductivity, the region 5353 has p-type conductivity and servesas a p-well. For example, the region 5355 is a region where an impurityis added to the semiconductor substrate 5352 and serves as a sourceregion or a drain region. Note that an LDD region can be formed in thesemiconductor substrate 5352.

For the insulating layer 5261, a single-layer structure or a layeredstructure of an insulating film containing oxygen or nitrogen, such assilicon oxide (SiO_(x)) film, silicon nitride (SiN_(x)) film, siliconoxynitride (SiO_(x)N_(y)) (x>y>0) film, or silicon nitride oxide(SiN_(x)O_(y)) (x>y>0) film can be used, for example. In an example inthe case where the insulating layer 5261 has a two-layer structure, asilicon nitride film and a silicon oxide film can be formed as a firstinsulating layer and a second insulating layer, respectively. In anexample in the case where the insulating layer 5261 has a three-layerstructure, a silicon oxide film, a silicon nitride film, and a siliconoxide film can be formed as a first insulating layer, a secondinsulating layer, and a third insulating layer, respectively.

For each of the semiconductor layer 5262, the semiconductor layer 5303a, and the semiconductor layer 5303 b, for example, a non-single-crystalsemiconductor (e.g., amorphous silicon, polycrystalline silicon, ormicrocrystalline silicon), a single crystal semiconductor, a compoundsemiconductor (e.g., SiGe or GaAs), an oxide semiconductor (e.g., ZnO,InGaZnO, IZO (indium zinc oxide), ITO (indium tin oxide), SnO, TiO, orAlZnSnO (AZTO)), an organic semiconductor, a carbon nanotube, or thelike can be used.

Note that for example, the region 5262 a is an intrinsic region where animpurity is not added to the semiconductor layer 5262 and serves as achannel region. However, an impurity can be added to the region 5262 a.The concentration of the impurity added to the region 5262 a ispreferably lower than the concentration of an impurity added to theregion 5262 b, the region 5262 c, the region 5262 d, or the region 5262e. Each of the region 5262 b and the region 5262 d is a region to whichan impurity is added at lower concentration than the region 5262 c orthe region 5262 e and serves as an LDD (lightly doped drain) region.Note that the region 5262 b and the region 5262 d can be eliminated.Each of the region 5262 c and the region 5262 e is a region to which animpurity is added at high concentration and serves as a source region ora drain region.

Note that the semiconductor layer 5303 b is a semiconductor layer towhich phosphorus or the like is added as an impurity element and hasn-type conductivity.

Note that in the case where an oxide semiconductor or a compoundsemiconductor is used for the semiconductor layer 5303 a, thesemiconductor layer 5303 b can be eliminated.

For each of the insulating layer 5263, the insulating layer 5302, andthe insulating layer 5356, a single-layer structure or a layeredstructure of an insulating film containing oxygen or nitrogen, such assilicon oxide (SiO_(x)) film, silicon nitride (SiN_(x)) film, siliconoxynitride (SiO_(x)N_(y)) (x>y>0) film, or silicon nitride oxide(SiN_(x)O_(y)) (x>y>0) film can be used, for example.

As each of the conductive layer 5264, the conductive layer 5266, theconductive layer 5268, the conductive layer 5271, the conductive layer5301, the conductive layer 5304, the conductive layer 5306, theconductive layer 5308, the conductive layer 5357, and the conductivelayer 5359, for example, a conductive film having a single-layerstructure or a layered structure, or the like can be used. For example,for the conductive film, a single-layer film containing one elementselected from the group consisting of aluminum (Al), tantalum (Ta),titanium (Ti), molybdenum (Mo), tungsten (W), neodymium (Nd), chromium(Cr), nickel (Ni), platinum (Pt), gold (Au), silver (Ag), copper (Cu),manganese (Mn), cobalt (Co), niobium (Nb), silicon (Si), iron (Fe),palladium (Pd), carbon (C), scandium (Sc), zinc (Zn), gallium (Ga),indium (In), tin (Sn), zirconium (Zr), and cerium (Ce); a compoundcontaining one or more elements selected from the above group; or thelike can be used. Note that the single film or the compound can containphosphorus (P), boron (B), arsenic (As), and/or oxygen (O), for example.For example, the compound is an alloy containing one or more elementsselected from the above plurality of elements (e.g., an alloy materialsuch as indium tin oxide (ITO), indium zinc oxide (IZO), indium tinoxide containing silicon oxide (ITSO), zinc oxide (ZnO), tin oxide(SnO), cadmium tin oxide (CTO), aluminum-neodymium (Al—Nd),aluminum-tungsten (AI-W), aluminum-zirconium (Al—Zr), aluminum titanium(Al—Ti), aluminum-cerium (Al—Ce), magnesium-silver (Mg—Ag),molybdenum-niobium (Mo—Nb), molybdenum-tungsten (Mo—W), ormolybdenum-tantalum (Mo—Ta)); a compound containing nitrogen and one ormore elements selected from the above plurality of elements (e.g., anitride film such as a titanium nitride film, a tantalum nitride film, amolybdenum nitride film, or the like); or a compound containing siliconand one or more elements selected from the above plurality of elements(e.g., a silicide film such as a tungsten silicide film, a titaniumsilicide film, a nickel silicide film, an aluminum silicon film, or amolybdenum silicon film); or the like. Alternatively, a nanotubematerial such as a carbon nanotube, an organic nanotube, an inorganicnanotube, or a metal nanotube can be used, for example.

Note that the conductive layer can have a single-layer structure or amulti-layer structure.

For each of the insulating layer 5265, the insulating layer 5267, theinsulating layer 5269, the insulating layer 5305, and the insulatinglayer 5358, an insulating layer having a single-layer structure or alayered structure, or the like can be used, for example. For example, asthe insulating layer, an insulating film containing oxygen or nitrogen,such as silicon oxide (SiO_(x)) film, silicon nitride (SiN_(x)) film,silicon oxynitride (SiO_(x)N_(y)) (x>y>0) film, or silicon nitride oxide(SiN_(x)O_(y)) (x>y>0) film; a film containing carbon such asdiamond-like carbon (DLC); an organic material such as a siloxane resin,epoxy, polyimide, polyamide, polyvinyl phenol, benzocyclobutene, oracrylic; or the like can be used.

Note that an insulating layer which serves as an alignment film, aninsulating layer which serves as a protrusion portion, or the like canbe formed over the insulating layer 5305 and the conductive layer 5306.

Note that an insulating layer or the like which serves as a colorfilter, a black matrix, or a protrusion portion can be formed over theconductive layer 5308. An insulating layer which serves as an alignmentfilm can be formed below the conductive layer 5308.

The transistor in this embodiment can be used for the shift register inEmbodiment 1 or 2. Since degradation of the transistor can be suppressedin the shift register in Embodiment 1 or 2, a non-single-crystalsemiconductor such as an amorphous semiconductor or a microcrystallinesemiconductor, an organic semiconductor, an oxide semiconductor, or thelike can be used for a semiconductor layer in FIG. 23B. Therefore,reduction in the number of manufacturing steps, reduction inmanufacturing cost, improvement in yield, the increase in the size of adisplay device, or the like can be achieved.

Embodiment 7

In this embodiment, examples of cross-sectional structures of a displaydevice are described with reference to FIGS. 24A to 24C.

FIG. 24A illustrates an example of a top view of a display device. Adriver circuit 5392 and a pixel portion 5393 are formed over a substrate5391. An example of the driver circuit 5392 is a scan line drivercircuit, a signal line driver circuit, or the like.

FIG. 24B illustrates an example of a cross section taken along line A-Bin FIG. 24A. FIG. 24B illustrates a substrate 5400, a conductive layer5401 formed over the substrate 5400, an insulating layer 5402 formed soas to cover the conductive layer 5401, a semiconductor layer 5403 aformed over the conductive layer 5401 and the insulating layer 5402; asemiconductor layer 5403 b formed over the semiconductor layer 5403 a, aconductive layer 5404 formed over the semiconductor layer 5403 b and theinsulating layer 5402, an insulating layer 5405 which is formed over theinsulating layer 5402 and the conductive layer 5404 and is provided withan opening portion, a conductive layer 5406 formed over the insulatinglayer 5405 and in the opening portion in the insulating layer 5405, aninsulating layer 5408 provided over the insulating layer 5405 and theconductive layer 5406, a liquid crystal layer 5407 formed over theinsulating layer 5405, a conductive layer 5409 formed over the liquidcrystal layer 5407 and the insulating layer 5408, and a substrate 5410provided over the conductive layer 5409.

The conductive layer 5401 can serve as a gate electrode. The insulatinglayer 5402 can serve as a gate insulating film. The conductive layer5404 can serve as a wiring, an electrode of a transistor, an electrodeof a capacitor, or the like. The insulating layer 5405 can serve as aninterlayer film or a planarization film. The conductive layer 5406 canserve as a wiring, a pixel electrode, or a reflective electrode. Theinsulating layer 5408 can serve as a sealant. The conductive layer 5409can serve as a counter electrode or a common electrode.

Here, parasitic capacitance is generated between the driver circuit 5392and the conductive layer 5409 in some cases. Accordingly, an outputsignal from the driver circuit 5392 or a potential of each node isdistorted or delayed, or power consumption is increased. However, whenthe insulating layer 5408 which can serve as the sealant is formed overthe driver circuit 5392 as illustrated in FIG. 24B, parasiticcapacitance generated between the driver circuit 5392 and the conductivelayer 5409 can be reduced. This is because the dielectric constant ofthe sealant is often lower than the dielectric constant of the liquidcrystal layer. Therefore, distortion or delay of the output signal fromthe driver circuit 5392 or the potential of each node can be reduced.Alternatively, power consumption of the driver circuit 5392 can bereduced.

Note that as illustrated in FIG. 24C, the insulating layer 5408 whichcan serve as the sealant can be formed over part of the driver circuit5392. Also in such a case, parasitic capacitance generated between thedriver circuit 5392 and the conductive layer 5409 can be reduced. Thus,distortion or delay of the output signal from the driver circuit 5392 orthe potential of each node can be reduced. Note that this embodiment isnot limited to this. It is possible not to form the insulating layer5408, which can serve as the sealant, over the driver circuit 5392.

Note that a display element is not limited to a liquid crystal element,and a variety of display elements such as an EL element or anelectrophoretic element can be used.

The structure of the display device in this embodiment can be combinedwith the shift register in Embodiment 1 or 2. For example, in the casewhere a non-single-crystal semiconductor such as an amorphoussemiconductor or a microcrystalline semiconductor, an organicsemiconductor, an oxide semiconductor, or the like is used for asemiconductor layer of a transistor, the channel width of the transistoris increased in many cases. However, by reducing parasitic capacitanceof the driver circuit as in this embodiment, the channel width of thetransistor can be decreased. Thus, a layout area can be reduced, so thatthe frame of the display device can be reduced. Alternatively, thedisplay device can have higher definition.

Embodiment 8

In this embodiment, an example of a manufacturing process of atransistor and a capacitor is described. In particular, a manufacturingprocess when an oxide semiconductor is used for a semiconductor layer isdescribed.

An example of a manufacturing process of a transistor and a capacitor isdescribed with reference to FIGS. 25A to 25C. FIGS. 25A to 25Cillustrate an example of a manufacturing process of a transistor 5441and a capacitor 5442. The transistor 5441 is an example of an invertedstaggered thin film transistor, in which a wiring is provided over anoxide semiconductor layer with a source electrode or a drain electrodetherebetween.

First, a first conductive layer is formed over the entire surface of asubstrate 5420 by sputtering. Next, the first conductive layer isselectively etched with the use of a resist mask formed through aphotolithography process using a first photomask, so that a conductivelayer 5421 and a conductive layer 5422 are formed. The conductive layer5421 can serve as a gate electrode. The conductive layer 5422 can serveas one of electrodes of the capacitor. Note that this embodiment is notlimited to this, and each of the conductive layers 5421 and 5422 caninclude a portion serving as a wiring, a gate electrode, or an electrodeof the capacitor. After that, the resist mask is removed.

Next, an insulating layer 5423 is formed over the entire surface byplasma-enhanced CVD or sputtering. The insulating layer 5423 can serveas a gate insulating layer and is formed so as to cover the conductivelayers 5421 and 5422. Note that the thickness of the insulating layer5423 is often 50 to 250 nm.

Next, the insulating layer 5423 is selectively etched with the use of aresist mask formed through a photolithography process using a secondphotomask, so that a contact hole 5424 which reaches the conductivelayer 5421 is formed. Then, the resist mask is removed. Note that thisembodiment is not limited to this, and the contact hole 5424 can beeliminated. Alternatively, the contact hole 5424 can be formed after anoxide semiconductor layer is formed. A cross-sectional view of the stepsso far corresponds to FIG. 25A.

Next, an oxide semiconductor layer is formed over the entire surface bysputtering. Note that this embodiment is not limited to this, and it ispossible to form the oxide semiconductor layer by sputtering and to forma buffer layer (e.g., an n⁺ layer) thereover. Note that the thickness ofthe oxide semiconductor layer is often 5 to 200 nm.

Next, the oxide semiconductor layer is selectively etched using a thirdphotomask. After that, the resist mask is removed.

Next, a second conductive layer is formed over the entire surface bysputtering. Then, the second conductive layer is selectively etched withthe use of a resist mask formed through a photolithography process usinga fourth photomask, so that a conductive layer 5429, a conductive layer5430, and a conductive layer 5431 are formed. The conductive layer 5429is connected to the conductive layer 5421 through the contact hole 5424.The conductive layers 5429 and 5430 can serve as the source electrodeand the drain electrode. The conductive layer 5431 can serve as theother of the electrodes of the capacitor. Note that this embodiment isnot limited to this, and each of the conductive layers 5429, 5430, and5431 can include a portion serving as a wiring, the source electrode,the drain electrode, or the electrode of the capacitor. Across-sectional view of the steps so far corresponds to FIG. 25B.

Next, heat treatment is performed at 200 to 600° C. in an air atmosphereor a nitrogen atmosphere. Through this heat treatment, rearrangement atthe atomic level occurs in an In—Ga—Zn—O-based non-single-crystal layer.In this manner, through heat treatment (including light annealing),strain which inhibits carrier movement is released. Note that there isno particular limitation to timing at which the heat treatment isperformed, and the heat treatment can be performed at any time after theoxide semiconductor layer is formed.

Next, an insulating layer 5432 is formed over the entire surface. Theinsulating layer 5432 can have either a single-layer structure or alayered structure. For example, in the case where an organic insulatinglayer is used as the insulating layer 5432, the organic insulating layeris formed in such a manner that a composition which is a material forthe organic insulating layer is applied and subjected to heat treatmentat 200 to 600° C. in an air atmosphere or a nitrogen atmosphere. Byforming the organic insulating layer which is in contact with the oxidesemiconductor layer in this manner, a thin film transistor with highlyreliable electric characteristics can be manufactured. Note that in thecase where an organic insulating layer is used as the insulating layer5432, a silicon nitride film or a silicon oxide film can be providedbelow the organic insulating layer.

Next, a third conductive layer is formed over the entire surface. Then,the third conductive layer is selectively etched with the use of aresist mask formed through a photolithography process using a fifthphotomask, so that a conductive layer 5433 and a conductive layer 5434are formed. A cross-sectional view of the steps so far corresponds toFIG. 25C. Each of the conductive layers 5433 and 5434 can serve as awiring, a pixel electrode, a reflective electrode, a light-transmittingelectrode, or the electrode of the capacitor. In particular, since theconductive layer 5434 is connected to the conductive layer 5422, theconductive layer 5434 can serve as the electrode of the capacitor 5442.Note that this embodiment is not limited to this, and the conductivelayers 5433 and 5434 can have a function of connecting the firstconductive layer and the second conductive layer to each other. Forexample, by connecting the conductive layers 5433 and 5434 to eachother, the conductive layer 5422 and the conductive layer 5430 can beconnected to each other through the third conductive layer (theconductive layers 5433 and 5434).

Through the above steps, the transistor 5441 and the capacitor 5442 canbe manufactured.

Note that as illustrated in FIG. 25D, an insulating layer 5435 can beformed over the oxide semiconductor layer 5425.

Note that as illustrated in FIG. 25E, the oxide semiconductor layer 5425can be formed after the second conductive layer is patterned.

Note that for the substrate, the insulating film, the conductive film,and the semiconductor layer in this embodiment, the materials describedin the other embodiments or materials which are similar to thosedescribed in this specification can be used.

When the transistor in this embodiment is used in the shift register inEmbodiment 1 or 2 or a display device including the shift register, thesize of a display portion can be increased. Alternatively, the displayportion can have higher definition.

Embodiment 9

In this embodiment, examples of electronic devices are described.

FIGS. 26A to 26H and FIGS. 27A to 27D illustrate electronic devices.These electronic devices can include a housing 5000, a display portion5001, a speaker 5003, an LED lamp 5004, operation keys 5005 (including apower switch or an operation switch for controlling the operation of adisplay device), a connection terminal 5006, a sensor 5007 (a sensorhaving a function of measuring force, displacement, position, speed,acceleration, angular velocity, rotational frequency, distance, light,liquid, magnetism, temperature, chemical substance, sound, time,hardness, electric field, current, voltage, electric power, radiation,flow rate, humidity, gradient, oscillation, odor, or infrared ray), amicrophone 5008, and the like.

FIG. 26A illustrates a mobile computer, which can include a switch 5009,an infrared port 5010, and the like in addition to the above objects.FIG. 26B illustrates a portable image regenerating device provided witha memory medium (e.g., a DVD regenerating device), which can include asecond display portion 5002, a memory medium reading portion 5011, andthe like in addition to the above objects. FIG. 26C illustrates agoggle-type display, which can include the second display portion 5002,a support portion 5012, an earphone 5013, and the like in addition tothe above objects. FIG. 26D illustrates a portable game machine, whichcan include the memory medium reading portion 5011 and the like inaddition to the above objects. FIG. 26E illustrates a projector, whichcan include a light source 5033, a projector lens 5034, and the like inaddition to the above objects. FIG. 26F illustrates a portable gamemachine, which can include the second display portion 5002, the memorymedium reading portion 5011, and the like in addition to the aboveobjects. FIG. 26G illustrates a television receiver, which can include atuner, an image processing portion, and the like in addition to theabove objects. FIG. 26H illustrates a portable television receiver,which can include a charger 5017 capable of transmitting and receivingsignals and the like in addition to the above objects. FIG. 27Aillustrates a display, which can include a support base 5018 and thelike in addition to the above objects. FIG. 27B illustrates a camera,which can include an external connecting port 5019, a shutter button5015, an image receiving portion 5016, and the like in addition to theabove objects. FIG. 27C illustrates a computer, which can include apointing device 5020, the external connecting port 5019, a reader/writer5021, and the like in addition to the above objects. FIG. 27Dillustrates a mobile phone, which can include an antenna 5014, a tunerof one-segment (1seg digital TV broadcasts) partial reception servicefor mobile phones and mobile terminals, and the like in addition to theabove objects.

The electronic devices illustrated in FIGS. 26A to 26H and FIGS. 27A to27D can have a variety of functions, for example, a function ofdisplaying a lot of information (e.g., a still image, a moving image,and a text image) on a display portion; a touch panel function; afunction of displaying a calendar, date, time, and the like; a functionof controlling processing with a lot of software (programs); a wirelesscommunication function; a function of being connected to a variety ofcomputer networks with a wireless communication function; a function oftransmitting and receiving a lot of data with a wireless communicationfunction; a function of reading a program or data stored in a memorymedium and displaying the program or data on a display portion. Further,the electronic device including a plurality of display portions can havea function of displaying image information mainly on one display portionwhile displaying text information on another display portion, a functionof displaying a three-dimensional image by displaying images whereparallax is considered on a plurality of display portions, or the like.Furthermore, the electronic device including an image receiving portioncan have a function of photographing a still image, a function ofphotographing a moving image, a function of automatically or manuallycorrecting a photographed image, a function of storing a photographedimage in a memory medium (an external memory medium or a memory mediumincorporated in the camera), a function of displaying a photographedimage on the display portion, or the like. Note that functions which canbe provided for the electronic devices illustrated in FIGS. 26A to 26Hand FIGS. 27A to 27D are not limited them, and the electronic devicescan have a variety of functions.

The electronic devices described in this embodiment each include adisplay portion for displaying some kind of information. In particular,in the case where a display device includes the shift register describedin Embodiment 1 or 2, malfunctions of a circuit can be prevented. Thus,display quality can be improved.

Next, applications of semiconductor devices are described.

FIG. 27E illustrates an example in which a semiconductor device isincorporated in a building structure. FIG. 27E illustrates a housing5022, a display portion 5023, a remote controller 5024 which is anoperation portion, a speaker 5025, and the like. The semiconductordevice is incorporated in the building structure as a wall-hanging typeand can be provided without requiring a large space.

FIG. 27F illustrates another example in which a semiconductor device isincorporated in a building structure. A display panel 5026 isincorporated in a prefabricated bath unit 5027, so that a bather canview the display panel 5026.

Note that although this embodiment describes the wall and theprefabricated bath are given as examples of the building structures,this embodiment is not limited to them. The semiconductor devices can beprovided in a variety of building structures.

Next, examples in which semiconductor devices are incorporated in movingobjects are described.

FIG. 27G illustrates an example in which a semiconductor device isincorporated in a car. A display panel 5028 is incorporated in a carbody 5029 of the car and can display information related to theoperation of the car or information input from inside or outside of thecar on demand. Note that the display panel 5028 may have a navigationfunction.

FIG. 27H illustrates an example in which a semiconductor device isincorporated in a passenger airplane. FIG. 27H illustrates a usagepattern when a display panel 5031 is provided for a ceiling 5030 above aseat of the passenger airplane. The display panel 5031 is incorporatedin the ceiling 5030 through a hinge portion 5032, and a passenger canview the display panel 5031 by stretching of the hinge portion 5032. Thedisplay panel 5031 has a function of displaying information by theoperation of the passenger.

Note that although bodies of a car and an airplane are illustrated asexamples of moving objects in this embodiment, this embodiment is notlimited to them. The semiconductor devices can be provided for a varietyof objects such as two-wheeled vehicles, four-wheeled vehicles(including cars, buses, and the like), trains (including monorails,railroads, and the like), and vessels.

This application is based on Japanese Patent Application serial no.2009-077955 filed with Japan Patent Office on Mar. 27, 2009, the entirecontents of which are hereby incorporated by reference.

What is claimed is:
 1. A semiconductor device comprising: a firstcircuit in an odd number stage; and a second circuit in an even numberstage, wherein the first circuit includes first to ninth transistors,wherein one of a source and a drain of the first transistor iselectrically connected to a first wiring, wherein one of a source and adrain of the second transistor is electrically connected to one of asource and a drain of the third transistor, wherein the other of thesource and the drain of the second transistor is electrically connectedto the other of the source and the drain of the third transistor,wherein a gate of the first transistor is electrically connected to theone of the source and the drain of the second transistor, wherein a gateof the second transistor is electrically connected to the other of thesource and the drain of the second transistor, wherein a gate of thethird transistor is electrically connected to a second wiring, whereinone of a source and a drain of the fourth transistor is electricallyconnected to the other of the source and the drain of the firsttransistor, wherein one of a source and a drain of the fifth transistoris electrically connected to the gate of the first transistor, whereinthe other of the source and the drain of the fifth transistor iselectrically connected to the other of the source and the drain of thefourth transistor, wherein a gate of the fifth transistor iselectrically connected to a gate of the fourth transistor, wherein oneof a source and a drain of the sixth transistor is electricallyconnected to the gate of the fourth transistor, wherein one of a sourceand a drain of the seventh transistor is electrically connected to thegate of the fourth transistor, wherein the other of the source and thedrain of the seventh transistor is electrically connected to the otherof the source and the drain of the fourth transistor, wherein a gate ofthe seventh transistor is electrically connected to the gate of thefirst transistor, wherein one of a source and a drain of the eighthtransistor is electrically connected to a gate of the sixth transistor,wherein the other of the source and the drain of the eighth transistoris electrically connected to the other of the source and the drain ofthe sixth transistor, wherein a gate of the eighth transistor iselectrically connected to the other of the source and the drain of thesixth transistor, wherein one of a source and a drain of the ninthtransistor is electrically connected to the gate of the sixthtransistor, wherein the other of the source and the drain of the ninthtransistor is electrically connected to the other of the source and thedrain of the fourth transistor, wherein a gate of the ninth transistoris electrically connected to the gate of the first transistor, whereinthe second circuit includes tenth to eighteenth transistors, wherein oneof a source and a drain of the tenth transistor is electricallyconnected to a third wiring, wherein one of a source and a drain of theeleventh transistor is electrically connected to one of a source and adrain of the twelfth transistor, wherein the other of the source and thedrain of the eleventh transistor is electrically connected to the otherof the source and the drain of the twelfth transistor, wherein a gate ofthe tenth transistor is electrically connected to the one of the sourceand the drain of the eleventh transistor, wherein a gate of the eleventhtransistor is electrically connected to the other of the source and thedrain of the eleventh transistor, wherein a gate of the twelfthtransistor is electrically connected to a fourth wiring, wherein one ofa source and a drain of the thirteenth transistor is electricallyconnected to the other of the source and the drain of the tenthtransistor, wherein one of a source and a drain of the fourteenthtransistor is electrically connected to the gate of the tenthtransistor, wherein the other of the source and the drain of thefourteenth transistor is electrically connected to the other of thesource and the drain of the thirteenth transistor, wherein a gate of thefourteenth transistor is electrically connected to a gate of thethirteenth transistor, wherein one of a source and a drain of thefifteenth transistor is electrically connected to the gate of thethirteenth transistor, wherein one of a source and a drain of thesixteenth transistor is electrically connected to the gate of thethirteenth transistor, wherein the other of the source and the drain ofthe sixteenth transistor is electrically connected to the other of thesource and the drain of the thirteenth transistor, wherein a gate of thesixteenth transistor is electrically connected to the gate of the tenthtransistor, wherein one of a source and a drain of the seventeenthtransistor is electrically connected to a gate of the fifteenthtransistor, wherein the other of the source and the drain of theseventeenth transistor is electrically connected to the other of thesource and the drain of the fifteenth transistor, wherein a gate of theseventeenth transistor is electrically connected to the other of thesource and the drain of the fifteenth transistor, wherein one of asource and a drain of the eighteenth transistor is electricallyconnected to the gate of the fifteenth transistor, wherein the other ofthe source and the drain of the eighteenth transistor is electricallyconnected to the other of the source and the drain of the thirteenthtransistor, wherein a gate of the eighteenth transistor is electricallyconnected to the gate of the tenth transistor, wherein a first clocksignal is input to the first wiring, wherein a second clock signal isinput to the second wiring, wherein a third clock signal is input to thethird wiring, wherein a fourth clock signal is input to said fourthwiring.
 2. A semiconductor device comprising: a gate driver, wherein thegate driver includes first to ninth transistors, wherein one of a sourceand a drain of the first transistor is electrically connected to a firstwiring, wherein one of a source and a drain of the second transistor iselectrically connected to one of a source and a drain of the thirdtransistor, wherein the other of the source and the drain of the secondtransistor is electrically connected to the other of the source and thedrain of the third transistor, wherein a gate of the first transistor iselectrically connected to the one of the source and the drain of thesecond transistor, wherein a gate of the second transistor iselectrically connected to the other of the source and the drain of thesecond transistor, wherein a gate of the third transistor iselectrically connected to a second wiring, wherein one of a source and adrain of the fourth transistor is electrically connected to the other ofthe source and the drain of the first transistor, wherein one of asource and a drain of the fifth transistor is electrically connected tothe gate of the first transistor, wherein the other of the source andthe drain of the fifth transistor is electrically connected to the otherof the source and the drain of the fourth transistor, wherein a gate ofthe fifth transistor is electrically connected to a gate of the fourthtransistor, wherein one of a source and a drain of the sixth transistoris electrically connected to the gate of the fourth transistor, whereinone of a source and a drain of the seventh transistor is electricallyconnected to the gate of the fourth transistor, wherein the other of thesource and the drain of the seventh transistor is electrically connectedto the other of the source and the drain of the fourth transistor,wherein a gate of the seventh transistor is electrically connected tothe gate of the first transistor, wherein one of a source and a drain ofthe eighth transistor is electrically connected to a gate of the sixthtransistor, wherein the other of the source and the drain of the eighthtransistor is electrically connected to the other of the source and thedrain of the sixth transistor, wherein a gate of the eighth transistoris electrically connected to the other of the source and the drain ofthe sixth transistor, wherein one of a source and a drain of the ninthtransistor is electrically connected to the gate of the sixthtransistor, wherein the other of the source and the drain of the ninthtransistor is electrically connected to the other of the source and thedrain of the fourth transistor, wherein a gate of the ninth transistoris electrically connected to the gate of the first transistor, whereinthe gate driver includes tenth to eighteenth transistors, wherein one ofa source and a drain of the tenth transistor is electrically connectedto a third wiring, wherein one of a source and a drain of the eleventhtransistor is electrically connected to one of a source and a drain ofthe twelfth transistor, wherein the other of the source and the drain ofthe eleventh transistor is electrically connected to the other of thesource and the drain of the twelfth transistor, wherein a gate of thetenth transistor is electrically connected to the one of the source andthe drain of the eleventh transistor, wherein a gate of the eleventhtransistor is electrically connected to the other of the source and thedrain of the eleventh transistor, wherein a gate of the twelfthtransistor is electrically connected to a fourth wiring, wherein one ofa source and a drain of the thirteenth transistor is electricallyconnected to the other of the source and the drain of the tenthtransistor, wherein one of a source and a drain of the fourteenthtransistor is electrically connected to the gate of the tenthtransistor, wherein the other of the source and the drain of thefourteenth transistor is electrically connected to the other of thesource and the drain of the thirteenth transistor, wherein a gate of thefourteenth transistor is electrically connected to a gate of thethirteenth transistor, wherein one of a source and a drain of thefifteenth transistor is electrically connected to the gate of thethirteenth transistor, wherein one of a source and a drain of thesixteenth transistor is electrically connected to the gate of thethirteenth transistor, wherein the other of the source and the drain ofthe sixteenth transistor is electrically connected to the other of thesource and the drain of the thirteenth transistor, wherein a gate of thesixteenth transistor is electrically connected to the gate of the tenthtransistor, wherein one of a source and a drain of the seventeenthtransistor is electrically connected to a gate of the fifteenthtransistor, wherein the other of the source and the drain of theseventeenth transistor is electrically connected to the other of thesource and the drain of the fifteenth transistor, wherein a gate of theseventeenth transistor is electrically connected to the other of thesource and the drain of the fifteenth transistor, wherein one of asource and a drain of the eighteenth transistor is electricallyconnected to the gate of the fifteenth transistor, wherein the other ofthe source and the drain of the eighteenth transistor is electricallyconnected to the other of the source and the drain of the thirteenthtransistor, wherein a gate of the eighteenth transistor is electricallyconnected to the gate of the tenth transistor, wherein a first clocksignal is input to the first wiring, wherein a second clock signal isinput to the second wiring, wherein a third clock signal is input to thethird wiring, wherein a fourth clock signal is input to said fourthwiring.